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FGL35N120FTD Datasheet(PDF) 6 Page - Fairchild Semiconductor

Part # FGL35N120FTD
Description  1200V, 35A Trench IGBT
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FGL35N120FTD Datasheet(HTML) 6 Page - Fairchild Semiconductor

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FGL35N120FTD Rev. A
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Figure 14. Turn-on Characteristics vs.
Gate Resistance
Collector Current
Figure 15. Turn-off Characteristics vs.
Figure 16.Switching Loss vs. Gate Resistance
Collector Current
Figure 17. Switching Loss vs. Collector Current
Figure 18. Turn off Switing
SOA Characteristics
0
102030
40
50
50
100
1000
2000
Common Emitter
VCC = 600V, VGE = 15V
IC = 35A
TC = 25
o
C
TC = 125
o
C
t
d(off)
t
f
Gate Resistance, RG [Ω]
10
20
30
40
50
60
70
10
100
200
Common Emitter
VGE = 15V, RG = 10Ω
T
C = 25
o
C
T
C = 125
o
C
t
r
t
d(on)
Collector Current, IC [A]
0
1020
304050
0.3
1
8
Common Emitter
V
CC = 600V, VGE = 15V
I
C = 35A
T
C = 25
o
C
T
C = 125
o
C
E
on
E
off
Gate Resistance, RG [Ω]
10
20
30
40
50
60
70
50
100
600
Common Emitter
VGE = 15V, RG = 10Ω
T
C = 25
o
C
T
C = 125
o
C
t
d(off)
t
f
Collector Current, IC [A]
10
20
30
40
50
60
70
0.3
1
10
Common Emitter
V
GE = 15V, RG = 10Ω
T
C = 25
o
C
T
C = 125
o
C
E
on
E
off
Collector Current, IC [A]
1
10
100
1000 3000
1
10
100
200
Safe Operating Area
V
GE = 15V, TC = 125
o
C
Collector-Emitter Voltage, VCE [V]


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