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FGL35N120FTD Datasheet(PDF) 5 Page - Fairchild Semiconductor

Part # FGL35N120FTD
Description  1200V, 35A Trench IGBT
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FGL35N120FTD Datasheet(HTML) 5 Page - Fairchild Semiconductor

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FGL35N120FTD Rev. A
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
Figure 8. Load Current vs. Frequency
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
Figure 11. SOA Characteristics
Figure 12. Turn-on Characteristics vs.
Gate Resistance
4
8
12
16
20
0
4
8
12
16
20
70A
IC = 18A
35A
Common Emitter
TC = 125
o
C
Gate-Emitter Voltage, VGE [V]
1
10
100
1000
0
30
60
90
120
150
V
CC = 600V
load Current : peak of square wave
Duty cycle : 50%
T
C
= 100
o
C
Power Dissipation = 147W
Frequency [kHz]
110
0
2000
4000
6000
8000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25
o
C
C
res
C
oes
C
ies
Collector-Emitter Voltage, VCE [V]
30
0
50
100
150
200
250
0
3
6
9
12
15
Common Emitter
TC = 25
o
C
600V
400V
V
CC = 200V
Gate Charge, Qg [nC]
1
10
100
1000
4000
0.01
0.1
1
10
100
400
1ms
10 ms
DC
*Notes:
1. TC = 25
o
C
2. TJ = 150
o
C
3. Single Pulse
10µs
100µs
Collector-Emitter Voltage, VCE [V]
0
1020304050
20
100
200
Common Emitter
VCC = 600V, VGE = 15V
IC = 35A
TC = 25
o
C
TC = 125
o
C
t
d(on)
t
r
Gate Resistance, RG [Ω]


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