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FGL35N120FTD Datasheet(PDF) 4 Page - Fairchild Semiconductor

Part # FGL35N120FTD
Description  1200V, 35A Trench IGBT
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FGL35N120FTD Datasheet(HTML) 4 Page - Fairchild Semiconductor

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FGL35N120FTD Rev. A
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Figure 4. Transfer Characteristics
Characteristics
Figure 5. Saturation Voltage vs. Case
Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
02
46
8
0
30
60
90
120
150
180
17V
9V
20V
TC = 25
o
C
15V
12V
10V
VGE = 8V
Collector-Emitter Voltage, VCE [V]
02
46
8
0
30
60
90
120
150
180
9V
17V
20V
TC = 125
o
C
15V
12V
10V
VGE = 8V
Collector-Emitter Voltage, VCE [V]
01
2
3
4
0
20
40
60
80
100
120
Common Emitter
VGE = 15V
TC = 25
o
C
TC = 125
o
C
Collector-Emitter Voltage, VCE [V]
46
8
10
12
0
20
40
60
80
100
120
Common Emitter
VCE = 20V
TC = 25
o
C
TC = 125
o
C
Gate-Emitter Voltage,VGE [V]
25
50
75
100
125
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
35A
70A
IC = 18A
Common Emitter
VGE = 15V
Collector-EmitterCase Temperature, TC [
o
C]
4
8
12
16
20
0
4
8
12
16
20
IC = 18A
35A
70A
Common Emitter
T
C = 25
o
C
Gate-Emitter Voltage, VGE [V]


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