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FGL35N120FTD Datasheet(PDF) 3 Page - Fairchild Semiconductor

Part # FGL35N120FTD
Description  1200V, 35A Trench IGBT
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FGL35N120FTD Datasheet(HTML) 3 Page - Fairchild Semiconductor

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FGL35N120FTD Rev. A
Electrical Characteristics of the Diode T
C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max
Units
VFM
Diode Forward Voltage
IF = 35A
TC = 25
oC-
2.7
3.4
V
TC = 125
oC-
2.5
-
trr
Diode Reverse Recovery Time
IF = 35A,
di/dt = 200A/
µs
TC = 25
oC
-
337
-
ns
TC = 125
oC
-
520
-
Irr
Diode Peak Reverse Recovery
Current
TC = 25
oC-
7.6
-
A
TC = 125
oC
-
12.9
-
Qrr
Diode Reverse Recovery Charge
TC = 25
oC
-
1292
-
nC
TC = 125
oC
-
3377
-


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