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PD64001H Datasheet(PDF) 12 Page - Microsemi Corporation |
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PD64001H Datasheet(HTML) 12 Page - Microsemi Corporation |
12 / 14 page ![]() P PD D6644000011//H H 11--P Poorrtt P PooE E M Maannaaggeerr D Daattaasshheeeett C C O O M M P P A A N N Y Y C C O O N N F F II D D E E N N T T II A A L L Copyright © 2009 Microsemi Rev. 1.3 2009-02-23 Analog Mixed Signal Group 2381 Morse Avenue, Irvine, CA 92614, USA; Phone (USA): (800) 713-4113, (ROW): (949) 221-7100 Fax: (949) 756-0308 12 Bill of Materials for a PoE System__________________________ Block QTY Reference Description PCB Footp rint Manufac turer Manufacturer's Part Number 2 C1,C10 CAP CRM 1nF 50v 10% X7R 0603 SMT PD-0603 EPCOS B37931-K5102-K60 3 C3,C8,C19 CAP CRM 100nF 16V 10% X7R 0603 SMT PD-0603 EPCOS B37931K9104K60 1 C4 CAP CRM 100nF 50V 10% X7R 0805 SMT PD-0805 Samsung CL21B104KBAC 1 C5 CAP CRM 3.3nF 16V 10% X7R 0603 SMT PD-0603 TDK C1608X7R1C332K 1 C12 CAP CRM 100nF 100V 10% X7R 1206 SMT PD-1206 Samsung CL31B104KCFNNN E 1 C14 CAP CRM 470pF 50v 10% X7R 0603 SMT PD-0603 EPCOS B37931-K5471-K60 1 C15 CAP CRM 2.2uF 10V 10% X7R 0805 SMT PD-0805 Samsung CL21B225KPFNNN C 1 C18 CAP CRM 22nF 25v 10% X7R 0603 SMT PD-0603 Rohm MCH185CN223KK 1 C21 CAP CRM 1uF 50V 10% X7R 1206 SMT PD-1206 TDK C3216X7R1H105K 2 D1,D3 (1) DIODE 16V 1W 5% D041 Insert DO-41 Microsemi 1N4745AP 1 D2 DIODE SCHOT 30V 200 mA SOT23 SMT PD-SOT23 Infineon BAT64 1 D5 DIODE REC 400V 1A SMA SMT PD-SMA Pan Jit GS1G 4 Q1,Q2,Q5,Q 6 FET NCH 100V 0.15A 6R Logic Level SOT23 PD-SOT23 Infineon BSS123 1 Q4 FET NCH 100V 13A 0.12R DPAK SMT PD-DPAK Fairchild FQD19N10 1 R1 RES 15.4K 62.5 mW 1% 0603 SMT PD-0603 Samsung RC1608F1542CS 3 R2,R4,R7 RES 10K 62.5 mW 1%0603 SMT PD-0603 Rohm MCR03EZHEFX100 2 2 R5,R6 RES 215K 0.125 W 0.5% 0805 SMT PD-0805 Yageo RT0805DRD07215K 1 R8 R mode PD-0603 2 R9,R11 RES 2R 0.75 W 1% 2010 SMT PD-2010 KOA RK73H2HTTE2R00F 1 R12 RES 1K 62.5 mW 1%0603 SMT PD-0603 Samsung RC1608F1001CS 1 R13 RES 75K 125 mW 1%0805 SMT PD-0805 Rohm MCR10EZHEF7502 1 R15 RES 5.11K 62.5 mW 1%0603 SMT PD-0603 Samsung RC1608F5111CS 1 R16 RES 1.24K 62.5 mW 1%0603 SMT PD-0603 ASJ CR16-1241FL 2 R17,R23 RES 402K 125 mW 1%0805 SMT PD-0805 Yageo RC0805FRF07402K 1 R18 RES 51.1K 62.5 mW 1%0603 SMT PD-0603 Samsung RC1608F5112CS 1 R24 RES 4.87K 125 mW 1%0805 SMT PD-0805 Samsung RC2012F4871CS 2 R25,R26 RES 140K 1%125 mW 0805 SMT PD-0805 Samsung RC2012F1403CS 1 U1 IC VOLT REG 5V 0.1A 4% SO8 SMT PD-SO8 ON Semi MC78L05ABDR2G 1 U2 (2) IC OP AMP DUAL SO8 SMT PD-SO8 Fairchild KA358ADTF_NL 1 port Chips et Circui try 1 U4 1-Port IEEE802.3at PoE PSE Manager PD- SOW20 Microsemi PD64001/H 1. Select these diodes as specified in "5V Regulator" section on page 4. 2. This operational amplifier should be use for applications intend for ambient temperature range of 0 °C to +70 °C. For ambient temperature range of -25 °C to +85°C replace it with KA258ADTF_NL. For ambient temperature range of -40 °C to +85°C replace it with TI's TLV342AID. |
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