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GC4221 Datasheet(PDF) 2 Page - Microsemi Corporation |
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GC4221 Datasheet(HTML) 2 Page - Microsemi Corporation |
2 / 4 page ![]() GC4210 – GC4275 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 2 CONTROL DEVICES – HIGH SPEED PIN DIODES TM ® Copyright 2006 Rev.: 2009-02-19 RoHS Compliant . Notes: 1. This series of devices is available in standard case styles 00, 30, and 35. Many other styles are available on request. 2. Capacitance is measured at 1 MHz. 3. Resistance is measured AT 1 GHz using transmission loss techniques. The junction capacitance specified is for a 00 (chip) package style. Standard wafer evaluation and characterization is completed using a style 30 package. Diodes are available in many case styles. Each type offers performance trade-offs. The proper choice of package style depends on the end application and operating environment. Consult factory for assistance. Reverse polarity diodes (NIP) and higher voltage PIN and NIP diodes are also available. (See data sheets for GC4300, GC4400, and GC4500 series respectively.) DEVICE ELECTRICAL PARAMETERS @ 25C (unless otherwise specified)E Model Number 1 Vb(V) IR=10μA (Min) Cj (pF) 2 @VR=10V (Max) Rs(Ω) 3 @20 mA (Max) TL(nS) IR=6mA/IF=10mA (Typ) Thermal Resistance θ (˚C/W) (Max) GC4270 70 0.06 1.5 100 80 GC4271 70 0.10 1.0 100 70 GC4272 70 0.20 0.8 100 70 GC4273 70 0.30 0.7 100 60 GC4274 70 0.40 0.6 100 50 GC4275 70 0.50 0.5 100 40 GC4210 100 0.06 1.5 200 80 GC4211 100 0.10 1.0 200 70 GC4212 100 0.20 0.75 200 70 GC4213 100 0.30 0.6 200 60 GC4214 100 0.40 0.5 200 50 GC4215 100 0.50 0.35 200 40 GC4220 250 0.06 2.5 500 80 GC4221 250 0.10 2.0 500 70 GC4222 250 0.20 1.5 500 70 GC4223 250 0.30 1.0 500 60 GC4224 250 0.40 0.8 500 50 GC4225 250 0.50 0.6 500 40 |
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