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VG26VS18165C Datasheet(PDF) 6 Page - Vanguard International Semiconductor

Part # VG26VS18165C
Description  1,048,576 x 16 - Bit CMOS Dynamic RAM
Download  27 Pages
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Manufacturer  VML [Vanguard International Semiconductor]
Direct Link  http://www.vis.com.tw
Logo VML - Vanguard International Semiconductor

VG26VS18165C Datasheet(HTML) 6 Page - Vanguard International Semiconductor

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Document:1G5-0147
Rev.1
Page 6
VIS
VG26(V)(S)18165C
1,048,576 x 16 - Bit
CMOS Dynamic RAM
DC Characteristics; 5- Volt Verion
(Ta = 0 to + 70 °C, VCC= + 5V
%,VSS = 0V)
Parameter
Symbol
Test Conditions
VG26(V)(S)18165C
Unit
Notes
-5
-6
Min
Max
Min
Max
Operating current
ICC1
RAS cycling
LCAS / UCAS cycling
tRC = min
-
120
-
110
mA
1, 2
Standby
Current
Low
power
S-version
ICC2
TTL interface
RAS, LCAS / UCAS = VIH
Dout = High-Z
-
2
-
2
mA
CMOS interface
RAS,
-0.2V
Dout = High-Z
-
0.25
-
0.25
mA
Standard
power
version
TTL interface
RAS,LCAS / UCAS = VIH
Dout = High-Z
2
-
2
mA
CMOS interface
RAS,
-0.2V
Dout = High-Z
1
-
1
mA
RAS-only
refresh current
ICC3
RAS cycling,
LCAS / UCAS = VIH
tRC = min
-
120
-
110
mA
1, 2
EDO page mode
current
ICC4
tRC = min
-
90
-
80
mA
1, 3
CAS-before-RAS
refresh current
ICC5
tRC = min
RAS, LCAS / UCAS cycling
-
120
-
110
mA
1, 2
Self-refresh current
(S - Version)
ICC8
-
350
-
350
CAS- before- RAS long
refresh current
(S-Version)
ICC9
Standby: VCC-
CAS before RAS refresh:
2048 cycles / 128ms
RAS,LCAS / UCAS:
VCC-
(Max)
Dout = High-Z,
-
500
-
500
10
±
CAS
Vcc
≥
CAS
Vcc
≥
t
RAS
100
µs
≥
µA
0.2V
RAS
≤
0V
V
IL
0.2V
≤
≤
0.2V
V
IH
V
IH
≤
≤
t
RAS
300ns
≤
µA


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