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HY27UF082G2B Datasheet(PDF) 54 Page - Hynix Semiconductor |
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HY27UF082G2B Datasheet(HTML) 54 Page - Hynix Semiconductor |
54 / 54 page Rev 0.2 / Jan. 2008 54 1 HY27UF(08/16)2G2B Series 2Gbit (256Mx8bit) NAND Flash MARKING INFORMATION - TSOP1 / FBGA / ULGA Packag M arking Exam ple TS O P 1 / FB G A / ULGA K O R H Y 2 7 U F x x 2 G 2 B x x x x Y W W x x - hynix - K O R - H Y 27 U Fxx2G 2B xxxx H Y : Hynix 2 7: NAND Flash U: Pow er Supply F: Classification xx : Bit O rganization 2G : Density 2: Mode B: Version x: Package Type x: Package M aterial x: O perating Tem perature x: Bad Block - Y : Year (ex: 5= year 2005, 6= year 2006) - w w : W ork W eek (ex: 12= w ork w eek 12) - xx: Process Code Note - C apital Letter - Sm all Letter : H ynix Sym bol : O rigin Country : U (2.7V~ 3.6V) : Single Level Cell+ Single D ie+ Large Block : 08(x8), 16(x16) : 2G bit : 2(1nCE & 1R/nB; Sequential R ow Read D isable) : 3rd G eneration : T(48-TSO P1), F(63-FBG A), U(52-ULG A) : Blank(N orm al), P(Lead Free) : C(0℃ ~70℃ ), I(-40℃ ~85℃ ) : B(Included Bad Block), S(1~ 5 Bad Block), P(All G ood Block) : Fixed Item : N on-fixed Item : Part N um ber |
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