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HY27UF082G2B Datasheet(PDF) 48 Page - Hynix Semiconductor

Part # HY27UF082G2B
Description  2Gb NAND FLASH
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Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

HY27UF082G2B Datasheet(HTML) 48 Page - Hynix Semiconductor

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Rev 0.2 / Jan. 2008
48
1
HY27UF(08/16)2G2B Series
2Gbit (256Mx8bit) NAND Flash
Bad Block Replacement
Over the lifetime of the device additional Bad Blocks may develop. In this case the block has to be replaced by copying
the data to a valid block. These additional Bad Blocks can be identified as attempts to program or erase them will give
errors in the Status Register.
Unlike the case of odd page which carries a possibility of affecting previous page, the failure of a page program oper-
ation does not affect the data in other pages in the same block, the block can be replaced by re-programming the cur-
rent data and copying the rest of the replaced block to an available valid block.
Refer to Table 23 and Figure 32 for the recommended procedure to follow if an error occurs during an operation.
Operation
Recommended Procedure
Erase
Block Replacement
Program
Block Replacement
Read
ECC (with 1bit/528byte)
Table 23: Block Failure
Figure 32: Bad Block Replacement
NOTE :
1. An error occurs on nth page of the Block A during program or erase operation.
2. Data in Block A is copied to same location in Block B which is valid block.
3. Nth data of block A which is in controller buffer memory is copied into nth page of Block B
4. Bad block table should be updated to prevent from eraseing or programming Block A


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