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HY27UF082G2B Datasheet(PDF) 22 Page - Hynix Semiconductor

Part # HY27UF082G2B
Description  2Gb NAND FLASH
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Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

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Rev 0.2 / Jan. 2008
22
1
HY27UF(08/16)2G2B Series
2Gbit (256Mx8bit) NAND Flash
Parameter
Symbol
3.3V
Unit
Min
Max
CLE Setup time
tCLS
12
ns
CLE Hold time
tCLH
5ns
CE setup time
tCS
20
ns
CE hold time
tCH
5ns
WE pulse width
tWP
12
ns
ALE setup time
tALS
12
ns
ALE hold time
tALH
5ns
Data setup time
tDS
12
ns
Data hold time
tDH
5ns
Write Cycle time
tWC
25
ns
WE High hold time
tWH
10
ns
Data Transfer from Cell to register
tR
25
us
ALE to RE Delay
tAR
10
ns
CLE to RE Delay
tCLR
10
ns
Ready to RE Low
tRR
20
ns
RE Pulse Width
tRP
12
ns
WE High to Busy
tWB
100
ns
Read Cycle Time
tRC
25
ns
RE Access Time
tREA
20
ns
RE High to Output High Z
tRHZ
100
ns
CE High to Output High Z
tCHZ
50
ns
CE High to Output hold
tCOH
15
ns
RE High to Output Hold
tRHOH
15
ns
RE Low to Output Hold
tRLOH
5ns
RE High Hold Time
tREH
10
ns
Output High Z to RE low
tIR
0ns
CE Low to RE Low
tCR
10
ns
Address to data loading time
tADL
70
ns
WE High to RE low
tWHR
60
ns
RE High to WE low
tRHW
100
ns
Device Resetting Time (Read / Program / Erase)
tRST
5/10/500(1)
us
Write Protection time
tWW(2)
100
ns
Table 13: AC Timing Characteristics
NOTE:
1. If Reset Command (FFh) is written at Ready state, the device goes into Busy for maximum 5us
2. Program / Erase Enable Operation : WP high to WE High.
Program / Erase Disable Operation : WP Low to WE High.


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