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HY27UF082G2B Datasheet(PDF) 21 Page - Hynix Semiconductor |
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HY27UF082G2B Datasheet(HTML) 21 Page - Hynix Semiconductor |
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21 / 54 page  Rev 0.2 / Jan. 2008 21 1 HY27UF(08/16)2G2B Series 2Gbit (256Mx8bit) NAND Flash Item Symbol Test Condition Min Max Unit Input / Output Capacitance CI/O VIL=0V - 10 pF Input Capacitance CIN VIN=0V - 10 pF Table 11: Pin Capacitance (TA=25C, F=1.0MHz) Parameter Symbol Min Typ Max Unit Program Time / Multi-Plane Program Time tPROG - 200 700 us Dummy Busy Time for Two Plane Program tDBSY -0.5 1 us Number of partial Program Cycles in the same page NOP - - 8 Cycles Block Erase Time / Multi-Plane Block Erase Time tBERS -1.5 2 ms Read Cache Busy Time tRBSY -3 tR us Table 12: Program / Erase Characteristics |
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