HY27UF082G2B datasheet(20/54 Pages) HYNIX

Part #	HY27UF082G2B

Description	2Gb NAND FLASH

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Manufacturer	HYNIX [Hynix Semiconductor]

Direct Link	http://www.skhynix.com/kor/main.do

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20 / 54 page

Rev 0.2 / Jan. 2008

20

1

HY27UF(08/16)2G2B Series

2Gbit (256Mx8bit) NAND Flash

Parameter

Symbol

Test Conditions

3.3Volt

Unit

Min

Typ

Max

Operating

Current

Sequential

Read

ICC1

tRC=25ns

CE=VIL, IOUT=0mA

-15

30

mA

Program

ICC2

-

15

30

mA

Erase

ICC3

-

15

30

mA

Stand-by Current (TTL)

ICC4

CE=VIH,

WP=0V/Vcc

-1

mA

Stand-by Current (CMOS)

ICC5

CE=Vcc-0.2,

WP=0V/Vcc

-10

50

uA

Input Leakage Current

ILI

VIN=0 to Vcc (max)

-

±

10

uA

Output Leakage Current

ILO

VOUT =0 to Vcc (max)

-

±

10

uA

Input High Voltage

VIH

-

0.8xVcc

-

Vcc+0.3

V

Input Low Voltage

VIL

-

-0.3

-

0.2xVcc

V

Output High Voltage Level

VOH

IOH=-400uA

2.4

-

V

Output Low Voltage Level

VOL

IOL=2.1mA

-

0.4

V

Output Low Current (R/B)

IOL

(R/B)

VOL=0.4V

8

10

-

mA

Table 9: DC and Operating Characteristics

Parameter

Value

3.3Volt

Input Pulse Levels

0V to VCC

Input Rise and Fall Times

5ns

Input and Output Timing Levels

VCC/2

Output Load (2.7V - 3.6V)

1 TTL GATE and CL=50pF

Table 10: AC Conditions

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