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HY27UF082G2B Datasheet(PDF) 12 Page - Hynix Semiconductor |
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HY27UF082G2B Datasheet(HTML) 12 Page - Hynix Semiconductor |
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12 / 54 page  Rev 0.2 / Jan. 2008 12 1 HY27UF(08/16)2G2B Series 2Gbit (256Mx8bit) NAND Flash 3. DEVICE OPERATION 3.1 Page Read This operation is operated by writing 00h and 30h to the command register along with five address cycles. Two types of operations are available: random read, serial page read. The random read mode is enabled when the page address is changed. The 2112 bytes (x8) or 1056 words (x16) of data within the selected page are transferred to the data registers in less than 25us(tR). The system controller may detect the completion of this data transfer (tR) by analyzing the output of R/B pin. Once the data in a page is loaded into the data registers, they may be read out in 25ns cycle time by sequentially pulsing RE. The repetitive high to low transitions of the RE clock make the device out- put the data starting from the selected column address up to the last column address. The device may output random data in a page instead of the sequential data by writing random data output command. The column address of next data, which is going to be out, may be changed to the address which follows random data output command. Random data output can be operated multiple times regardless of how many times it is done in a page. 3.2 Page Program The device is programmed by page. The number of consecutive partial page programming operation within the same page without an intervening erase operation must not exceed 8 times. The addressing should be done on each pages in a block. A page program cycle consists of a serial data loading period in which up to 2112bytes of data may be loaded into the data register, followed by a non-volatile programming period where the loaded data is programmed into the appropriate cell. The serial data loading period begins by inputting the Serial Data Input command (80h), fol- lowed by the five cycle address inputs and then serial data. The bytes other than those to be programmed do not need to be loaded. The device supports random data input in a page. The column address of next data, which will be entered, may be changed to the address which follows random data input command (85h). Random data input may be operated multiple times regardless of how many times it is done in a page. The Page Program confirm command (10h) initiates the programming process. Writing 10h alone without pre- viously entering the serial data will not initiate the programming process. The internal write state controller automati- cally executes the algorithms and timings necessary for program and verify, thereby freeing the system controller for other tasks. Once the program process starts, the Read Status Register command may be entered to read the status register. The system controller can detect the completion of a program cycle by monitoring the R/B output, or the Sta- tus bit (I/O 6) of the Status Register. Only the Read Status command and Reset command are valid while programming is in progress. When the Page Program is complete, the Write Status Bit (I/O 0) may be checked. The internal write verify detects only errors for "1"s that are not successfully programmed to "0"s. The command register remains in Read Status command mode until another valid command is written to the com- mand register. Figure 16 details the sequence. |
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