Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

HY27UF082G2B Datasheet(PDF) 11 Page - Hynix Semiconductor

Part # HY27UF082G2B
Description  2Gb NAND FLASH
Download  54 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

HY27UF082G2B Datasheet(HTML) 11 Page - Hynix Semiconductor

Back Button HY27UF082G2B Datasheet HTML 7Page - Hynix Semiconductor HY27UF082G2B Datasheet HTML 8Page - Hynix Semiconductor HY27UF082G2B Datasheet HTML 9Page - Hynix Semiconductor HY27UF082G2B Datasheet HTML 10Page - Hynix Semiconductor HY27UF082G2B Datasheet HTML 11Page - Hynix Semiconductor HY27UF082G2B Datasheet HTML 12Page - Hynix Semiconductor HY27UF082G2B Datasheet HTML 13Page - Hynix Semiconductor HY27UF082G2B Datasheet HTML 14Page - Hynix Semiconductor HY27UF082G2B Datasheet HTML 15Page - Hynix Semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 11 / 54 page
background image
Rev 0.2 / Jan. 2008
11
1
HY27UF(08/16)2G2B Series
2Gbit (256Mx8bit) NAND Flash
2. BUS OPERATION
There are six standard bus operations that control the device. These are Command Input, Address Input, Data Input,
Data Output, Write Protect, and Standby.
Typically glitches less than 3ns on Chip Enable, Write Enable and Read Enable are ignored by the memory and do not
affect bus operations.
2.1 Command Input
Command Input bus operation is used to give a command to the memory device. Command are accepted with Chip
Enable low, Command Latch Enable High, Address Latch Enable low and Read Enable High and latched on the rising
edge of Write Enable. Moreover for commands that starts a modify operation (write/erase) the Write Protect pin must be
high. See Figure 6 and Table 13 for details of the timings requirements. Command codes are always applied on IO7:0
regardless of the bus configuration. (x8 or x16)
2.2 Address Input
Address Input bus operation allows the insertion of the memory address. Five cycles are required to input the addresses
for the 4Gbit devices. Addresses are accepted with Chip Enable low, Address Latch Enable High, Command Latch Enable
low and Read Enable High and latched on the rising edge of Write Enable. Moreover for commands that starts a modify-
ing operation (write/erase) the Write Protect pin must be high. See Figure 7 and Table 13 for details of the timings
requirements. Addresses are always applied on IO7:0 regardless of the bus configuration (x8 or x16).
2.3 Data Input
Data Input bus operation allows to feed to the device the data to be programmed. The data insertion is serial and timed
by the Write Enable cycles. Data are accepted only with Chip Enable low, Address Latch Enable low, Command Latch
Enable low, Read Enable High, and Write Protect High and latched on the rising edge of Write Enable. See Figure 8 and
Table 13 for details of the timings requirements.
2.4 Data Output
Data Output bus operation allows to read data from the memory array and to check the status register content, the EDC
register content and the ID data. Data can be serially shifted out by toggling the Read Enable pin with Chip Enable low,
Write Enable High, Address Latch Enable low, and Command Latch Enable low. See Figure 9,10,12,13,14 and Table 13
for details of the timings requirements.
2.5 Write Protect
Hardware Write Protection is activated when the Write Protect pin is low. In this condition modifying operation does not
start and the content of the memory is not altered. Write Protect pin is not latched by Write Enable to ensure the protec-
tion even during the power up.
2.6 Standby
In Standby mode the device is deselected, outputs are disabled and Power Consumption is reduced.


Similar Part No. - HY27UF082G2B

ManufacturerPart #DatasheetDescription
logo
Hynix Semiconductor
HY27UF082G2A HYNIX-HY27UF082G2A Datasheet
348Kb / 45P
   2Gbit (256Mx8bit/128Mx16bit) NAND Flash
More results

Similar Description - HY27UF082G2B

ManufacturerPart #DatasheetDescription
logo
Samsung semiconductor
K9F2G08U0C SAMSUNG-K9F2G08U0C Datasheet
707Kb / 39P
   2Gb C-die NAND Flash
logo
Micron Technology
MT29F2G16AADWPDTR MICRON-MT29F2G16AADWPDTR Datasheet
808Kb / 88P
   2Gb x8, x16: NAND Flash Memory
logo
KIOXIA Corporation
TC58CYG1S3HRAIG KIOXIA-TC58CYG1S3HRAIG Datasheet
2Mb / 43P
   2Gb, 1.8V Serial Interface NAND
TC58CVG1S3HRAIG KIOXIA-TC58CVG1S3HRAIG Datasheet
2Mb / 43P
   2Gb, 3.3V Serial Interface NAND
TC58CVG1S3HRAIJ KIOXIA-TC58CVG1S3HRAIJ Datasheet
1Mb / 49P
   2Gb, 3.3V Serial Interface NAND
TC58CYG1S3HRAIJ KIOXIA-TC58CYG1S3HRAIJ Datasheet
1Mb / 49P
   2Gb 1.8V Serial Interface NAND
logo
Micron Technology
MT29F1G08 MICRON-MT29F1G08 Datasheet
103Kb / 1P
   NAND Flash
logo
Transcend Information. ...
TS2GMP820 TRANSCEND-TS2GMP820 Datasheet
93Kb / 4P
   2GB/4GB USB Flash Drive
TS2GMP320 TRANSCEND-TS2GMP320 Datasheet
143Kb / 4P
   2GB/4GB USB Flash Drive
logo
Samsung semiconductor
K9F1G08U0D SAMSUNG-K9F1G08U0D Datasheet
687Kb / 38P
   1Gb NAND Flash
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com