Rev. 1.4 / July 2006

19

HY5PS12821(L)F

HY5PS121621(L)F

3.5. Input/Output Capacitance

4. Electrical Characteristics & AC Timing Specification

Refresh Parameters by Device Density

DDR2 SDRAM speed bins and tRCD, tRP and tRC for corresponding bin

Note 1: 8 bank device Precharge All Allowance : tRP for a Precharge All command for and 8 Bank device

will equal to tRP+1*tCK, where tRP are the values for a single bank Precharge, which are shown in the

above table.

Parameter

Symbol

DDR2 400

DDR2 533

DDR2 667

DDR2 800

Units

Min

Max

Min

Max

Input capacitance, CK and CK

CCK

1.0

2.0

1.0

2.0

pF

Input capacitance delta, CK and CK

CDCK

x

0.25

x

0.25

pF

Input capacitance, all other input-only pins

CI

1.0

2.0

1.0

2.0

pF

Input capacitance delta, all other input-only pins

CDI

x

0.25

x

0.25

pF

Input/output capacitance, DQ, DM, DQS, DQS

CIO

2.5

4.0

2.5

3.5

pF

Input/output capacitance delta, DQ, DM, DQS, DQS

CDIO

x

0.5

x

0.5

pF

Parameter

Symbol

256Mb 512Mb 1Gb

2Gb

4Gb

Units

Refresh to Active/Refresh command

time

tRFC

75

105

127.5

195

327.5

ns

Average periodic refresh interval

tREFI

7.8

7.8

7.8

7.8

7.8

ns

3.9

3.9

3.9

3.9

3.9

ns

Speed

DDR2-667

DDR2-533

DDR2-400

Units

Bin(CL-tRCD-tRP)

5-5-5

4-4-4

3-3-3

Parameter

min

min

min

CAS Latency

54

3

tCK

tRCD

15

15

15

ns

tRPNote1

15

15

15

ns

tRAS

45

45

40

ns

tRC

60

60

55

ns