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HY5PS12421F-E3 Datasheet(PDF) 17 Page - Hynix Semiconductor |
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HY5PS12421F-E3 Datasheet(HTML) 17 Page - Hynix Semiconductor |
17 / 35 page Rev. 1.4 / July 2006 17 1HY5PS12421(L)F HY5PS12821(L)F HY5PS121621(L)F IDD Test Conditions (IDD values are for full operating range of Voltage and Temperature, Notes 1-5) Note: 1. IDD specifications are tested after the device is properly initialized 2. Input slew rate is specified by AC Parametric Test Condition 3. IDD parameters are specified with ODT disabled. 4. Data bus consists of DQ, DM, DQS, DQS, RDQS, RDQS, LDQS, LDQS, UDQS, and UDQS. IDD values must be met with all combina- tions of EMRS bits 10 and 11. 5. Definitions for IDD LOW is defined as Vin ≤ VILAC(max) HIGH is defined as Vin ≥ VIHAC(min) STABLE is defined as inputs stable at a HIGH or LOW level FLOATING is defined as inputs at VREF = VDDQ/2 SWITCHING is defined as: inputs changing between HIGH and LOW every other clock cycle (once per two clocks) for address and control signals, and inputs changing between HIGH and LOW every other data transfer (once per clock) for DQ signals not including masks or strobes. Symbol Conditions Units IDD0 Operating one bank active-precharge current; tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRAS min(IDD) ; CKE is HIGH, CS is HIGH between valid commands;Address bus inputs are SWITCHING;Data bus inputs are SWITCHING mA IDD1 Operating one bank active-read-precharge current ; IOUT = 0mA;BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRC = tRC (IDD), tRAS = tRASmin(IDD), tRCD = tRCD(IDD) ; CKE is HIGH, CS is HIGH between valid commands ; Address bus inputs are SWITCHING ; Data pattern is same as IDD4W mA IDD2P Precharge power-down current ; All banks idle ; tCK = tCK(IDD) ; CKE is LOW ; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING mA IDD2Q Precharge quiet standby current;All banks idle; tCK = tCK(IDD);CKE is HIGH, CS is HIGH; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING mA IDD2N Precharge standby current; All banks idle; tCK = tCK(IDD); CKE is HIGH, CS is HIGH; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA IDD3P Active power-down current; All banks open; tCK = tCK(IDD); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING Fast PDN Exit MRS(12) = 0 mA Slow PDN Exit MRS(12) = 1 mA IDD3N Active standby current; All banks open; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP =tRP(IDD); CKE is HIGH, CS is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA IDD4W Operating burst write current; All banks open, Continuous burst writes; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA IDD4R Operating burst read current; All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid com- mands; Address bus inputs are SWITCHING;; Data pattern is same as IDD4W mA IDD5B Burst refresh current; tCK = tCK(IDD); Refresh command at every tRFC(IDD) interval; CKE is HIGH, CS is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA IDD6 Self refresh current; CK and CK at 0V; CKE ≤ 0.2V; Other control and address bus inputs are FLOATING; Data bus inputs are FLOATING mA IDD7 Operating bank interleave read current; All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = tRCD(IDD)-1*tCK(IDD); tCK = tCK(IDD), tRC = tRC(IDD), tRRD = tRRD(IDD), tRCD = 1*tCK(IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are STABLE during DESELECTs; Data pat- tern is same as IDD4R; - Refer to the following page for detailed timing conditions mA |
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