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HY5DU573222FP-28 Datasheet(PDF) 22 Page - Hynix Semiconductor

Part # HY5DU573222FP-28
Description  256M(8Mx32) GDDR SDRAM
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Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

HY5DU573222FP-28 Datasheet(HTML) 22 Page - Hynix Semiconductor

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1HY5DU573222F(P)
Rev. 1.1 / May. 2005
22
DC CHARACTERISTICS II (TA=0 to 70oC, Voltage referenced to VSS = 0V)
Note :
1. IDD1, IDD4 and IDD5 depend on output loading and cycle rates. Specified values are measured with the output open.
2. Min. of tRFC (Auto Refresh Row Cycle Time) is shown at AC CHARACTERISTICS.
Parameter
Sym
bol
Test Condition
Speed
Unit Note
2
22
25
28
33
36
4
5
Operating Current
IDD0
One bank; Active - Precharge;
tRC=tRC(min); tCK=tCK(min);
DQ,DM and DQS inputs
changing twice per clock cycle;
address and control inputs
changing once per clock cycle
350
330
310 290 270 260 250 250 mA
1
Operating Current
IDD1
Burstlength=2,Onebankactive
tRC
≥ tRC(min), IOL=0mA
390
370
350 330 310 300 290 280 mA
1
Precharge Standby
Current in Power
Down Mode
IDD2P CKE
≤ VIL(max), tCK=min
50
50
50
50
50
50
50
50
mA
Precharge Standby
Current in Non
Power Down Mode
IDD2N
CKE
≥ VIH(min), /CS ≥ VIH(min),
tCK = min, Input signals are
changed one time during 2clks
270
260
250 230 210 210 210 200 mA
Active Standby Cur-
rent in Power Down
Mode
IDD3P CKE
≤ VIL(max), tCK=min
70
70
70
60
50
50
50
50
mA
Active Standby Cur-
rent in Non Power
Down Mode
IDD3N
CKE
≥ VIH(min), /CS ≥ VIH(min),
tCK=min, Input signals are
changed one time during 2clks
340
320
300 280 270 260 250 240 mA
Burst Mode Operat-
ing Current
IDD4
tCK
≥tCK(min),IOL=0mA
All banks active
850
800
750 700 600 550 550 550 mA
1
Auto Refresh Current IDD5
tRC
≥ tRFC(min),
All banks active
600
600
600 600 500 500 500 500 mA
1,2
Self Refresh Current
IDD6 CKE ≤ 0.2V
8
8
8
88888
mA
Operating Current -
Four Bank Operation
IDD7
Four bank interleaving with
BL=4, Refer to the following
page for detailed test condition
1100 1000 900 800 700 600 600 600 mA


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