Electronic Components Datasheet Search |
|
HY5DU12822DT-D43 Datasheet(PDF) 3 Page - Hynix Semiconductor |
|
|
HY5DU12822DT-D43 Datasheet(HTML) 3 Page - Hynix Semiconductor |
3 / 29 page Rev. 1.0 / May 2007 3 1HY5DU12822D(L)TP HY5DU121622D(L)TP DESCRIPTION The HY5DU12822D(L)T(P) and HY5DU121622D(L)T(P) are a 536,870,912-bit CMOS Double Data Rate(DDR) Synchro- nous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. This Hynix 512Mb DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are inter- nally pipelined and 2-bit prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with SSTL_2. FEATURES •VDD, VDDQ = 2.3V min ~ 2.7V max (Typical 2.5V Operation +/- 0.2V for DDR266, 333) •VDD, VDDQ = 2.4V min ~ 2.7V max (Typical 2.6V Operation +0.1/- 0.2V for DDR400 product ) • All inputs and outputs are compatible with SSTL_2 interface • Fully differential clock inputs (CK, /CK) operation • Double data rate interface • Source synchronous - data transaction aligned to bidirectional data strobe (DQS) • x16 device has two bytewide data strobes (UDQS, LDQS) per each x8 I/O • Data outputs on DQS edges when read (edged DQ) Data inputs on DQS centers when write (centered DQ) • On chip DLL align DQ and DQS transition with CK transition • DM mask write data-in at the both rising and falling edges of the data strobe • All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock • Programmable CAS latency 2/2.5 (DDR266, 333) and 3 (DDR400 product) supported • Programmable burst length 2/4/8 with both sequen- tial and interleave mode • Internal four bank operations with single pulsed /RAS • Auto refresh and self refresh supported •tRAS lock out function supported • 8192 refresh cycles/64ms • JEDEC standard 400mil 66pin TSOP-II with 0.65mm pin pitch • Lead free (*ROHS Compliant) OPERATING FREQUENCY Grade Clock Rate Remark -D43 200MHz@CL3 DDR400B (3-3-3) - J 133MHz@CL2 166MHz @CL2.5 & @CL3 DDR333 (2.5-3-3) DDR333 (3-3-3) - K 133MHz@CL2 133MHz@CL2.5 DDR266A (2-3-3) - H 100MHz@CL2 133MHz@CL2.5 DDR266B (2.5-3-3) - L 100MHz@CL2 DDR200 (2-2-2) ORDERING INFORMATION *X means speed grade *ROHS (Restriction Of Hazardous Substance) Part No. Configuration Package HY5DU12822D(L)T(P)-X* 64M x 8 400mil 66pin TSOP-II (Lead free) HY5DU121622D(L)T(P)-X* 32M x 16 |
Similar Part No. - HY5DU12822DT-D43 |
|
Similar Description - HY5DU12822DT-D43 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |