Rev. 1.0 / May 2007

9

HY5DU121622D(L)TP

WRITE MASK TRUTH TABLE

Function

CKEn-1

CKEn

/CS, /RAS,

/CAS, /WE

DM

ADDR

A10/

AP

BA

Note

Data Write

H

X

X

L

X

1,2

Data-In Mask

H

X

X

H

X

1,2

Note :

1.

Write Mask command masks burst write data with reference to LDQS/UDQS(Data Strobes) and it is not related with read data.

In case of x16 data I/O, LDM and UDM control lower byte(DQ0~7) and Upper byte(DQ8~15) respectively.

2. In here, Don’t Care means logical value only, it doesn’t mean ’Don’t care for DC level of each signals’. DC level should be out of

Note :

1. UDM, LDM states are Don’t Care. Refer to below Write Mask Truth Table.(note 6)

2. OP Code(Operand Code) consists of A0~A12 and BA0~BA1 used for Mode Register setting during Extended MRS or MRS. Before

entering Mode Register Set mode, all banks must be in a precharge state and MRS command can be issued after tRP period from

Prechagre command.

3. If a Read with Auto-precharge command is detected by memory component in CK(n), then there will be no command presented

to activate bank until CK(n+BL/2+tRP).

4. If a Write with Auto-precharge command is detected by memory component in CK(n), then there will be no command presented

to activate bank until CK(n+BL/2+1+tDPL+tRP). Last Data-In to Prechage delay(tDPL) which is also called Write Recovery

Time(tWR) is needed to guarantee that the last data have been completely written.

5. If A10/AP is High when Precharge command being issued, BA0/BA1 are ignored and all banks are selected to be precharged.

6. In here, Don’t Care means logical value only, it doesn’t mean ’Don’t care for DC level of each signals’. DC level should be out of