Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

H5DU5182ETR-FAC Datasheet(PDF) 24 Page - Hynix Semiconductor

Part # H5DU5182ETR-FAC
Description  512Mb DDR SDRAM
Download  29 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

H5DU5182ETR-FAC Datasheet(HTML) 24 Page - Hynix Semiconductor

Back Button H5DU5182ETR-FAC Datasheet HTML 20Page - Hynix Semiconductor H5DU5182ETR-FAC Datasheet HTML 21Page - Hynix Semiconductor H5DU5182ETR-FAC Datasheet HTML 22Page - Hynix Semiconductor H5DU5182ETR-FAC Datasheet HTML 23Page - Hynix Semiconductor H5DU5182ETR-FAC Datasheet HTML 24Page - Hynix Semiconductor H5DU5182ETR-FAC Datasheet HTML 25Page - Hynix Semiconductor H5DU5182ETR-FAC Datasheet HTML 26Page - Hynix Semiconductor H5DU5182ETR-FAC Datasheet HTML 27Page - Hynix Semiconductor H5DU5182ETR-FAC Datasheet HTML 28Page - Hynix Semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 24 / 29 page
background image
Rev. 1.0 / Nov. 2009
24
1H5DU5182ETR
H5DU5162ETR
Note:
1. All voltages referenced to Vss.
2. Tests for ac timing, IDD, and electrical, ac and dc characteristics, may be conducted at nominal reference/supply voltage levels,
but the related specifications and device operation are guaranteed for the full voltage range specified.
3. Below figure represents the timing reference load used in defining the relevant timing parameters of the part. It is not intended to
be either a precise representation of the typical system environment nor a depiction of the actual load presented by a production
tester. System designers will use IBIS or other simulation tools to correlate the timing reference load to a system environment.
Manufacturers will correlate to their production test conditions (generally a coaxial transmission line terminated at the tester elec-
tronics).
4. AC timing and IDD tests may use a VIL to VIHswing of up to 1.5 V in the test environment, but input timing is still referenced to
VREF (or to the crossing point for CK, /CK), and parameter specifications are guaranteed for the specified ac input levels under
normal use conditions. The minimum slew rate for the input signals is 1 V/ns in the range between VIL(ac) and VIH(ac).
5. The ac and dc input level specifications are as defined in the SSTL_2 Standard (i.e., the receiver will effectively switch as a result
of the signal crossing the ac input level and will remain in that state as long as the signal does not ring back above (below) the
dc input LOW (HIGH) level.
6. Inputs are not recognized as valid until VREF stabilizes. Exception: during the period before VREF stabilizes, CKE < 0.2VDDQ is
recognized as LOW.
7. The CK, /CK input reference level (for timing referenced to CK, /CK) is the point at which CK and /CK cross; the input reference
level for signals other than CK, /CK is VREF.
8. The output timing reference voltage level is VTT.
9. Operation or timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must
be powered down and then restarted through the specified initialization sequence before normal operation can continue.
10. tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referenced to
a specific voltage level but specify when the device output is no longer driving (HZ), or begins driving (LZ).
11. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this parameter, but
system performance (bus turnaround) will degrade accordingly.
12. The specific requirement is that DQS be valid (HIGH, LOW, or at some point on a valid transition) on or before this CK edge. A
valid transition is defined as monotonic and meeting the input slew rate specifications of the device. When no writes were previ-
ously in progress on the bus, DQS will be transitioning from High-Z to logic LOW. If a previous write was in progress, DQS could
be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on tDQSS.
13. A maximum of eight AUTO REFRESH commands can be posted to any given DDR SDRAM device.
14. For command/address input slew rate ≥ 1.0 V/ns.
15. For command/address input slew rate ≥ 0.5 V/ns and < 1.0 V/ns
16. For CK & /CK slew rate ≥ 1.0 V/ns (single-ended)
17. These parameters guarantee device timing, but they are not necessarily tested on each device.
They may be guaranteed by device design or tester correlation.
18. Slew Rate is measured between VOH(ac) and VOL(ac).
19. Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this
value can be greater than the minimum specification limits for tCL and tCH).
For example, tCL and tCH are = 50% of the period, less the half period jitter (tJIT(HP)) of the clock source, and less the half
period jitter due to crosstalk (tJIT(crosstalk)) into the clock traces.
Figure: Timing Reference Load
VDDQ
50
Output
(VOUT)
30 pF
Ω


Similar Part No. - H5DU5182ETR-FAC

ManufacturerPart #DatasheetDescription
logo
Hynix Semiconductor
H5DU5182ETR-FAI HYNIX-H5DU5182ETR-FAI Datasheet
353Kb / 29P
   512Mb DDR SDRAM
More results

Similar Description - H5DU5182ETR-FAC

ManufacturerPart #DatasheetDescription
logo
Hynix Semiconductor
HY5DU12822B HYNIX-HY5DU12822B Datasheet
396Kb / 37P
   512Mb DDR SDRAM
H5DU5182EFR-FAC HYNIX-H5DU5182EFR-FAC Datasheet
523Kb / 30P
   512Mb DDR SDRAM
HY5DU12822DT-D43 HYNIX-HY5DU12822DT-D43 Datasheet
1Mb / 29P
   512Mb DDR SDRAM
HY5DU12422BT HYNIX-HY5DU12422BT_06 Datasheet
692Kb / 31P
   512Mb DDR SDRAM
HY5DU12422AT HYNIX-HY5DU12422AT Datasheet
381Kb / 33P
   512Mb DDR SDRAM
H5DU5182ETR-FAI HYNIX-H5DU5182ETR-FAI Datasheet
353Kb / 29P
   512Mb DDR SDRAM
HY5DU12822DFP-D43I HYNIX-HY5DU12822DFP-D43I Datasheet
466Kb / 29P
   512Mb DDR SDRAM
HY5DU12822DFP-D43 HYNIX-HY5DU12822DFP-D43 Datasheet
468Kb / 29P
   512Mb DDR SDRAM
HY5DU12422C HYNIX-HY5DU12422C_06 Datasheet
2Mb / 31P
   512Mb DDR SDRAM
H5DU5182EFR-FAJ HYNIX-H5DU5182EFR-FAJ Datasheet
511Kb / 30P
   512Mb DDR SDRAM
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com