SEMIX703GAR126HDS datasheet(2/6 Pages) SEMIKRON

Part #	SEMIX703GAR126HDS

Description	Trench IGBT Modules

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Manufacturer	SEMIKRON [Semikron International]

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SEMiX703GAR126HDs

2

Rev. 15 – 16.12.2009

td(on)

VCC = 600 V

IC =450 A

RG on =1.6 Ω

RG off =1.6 Ω

Tj = 125 °C

310

ns

tr

Tj = 125 °C

60

ns

Eon

Tj = 125 °C

32

mJ

td(off)

Tj = 125 °C

680

ns

tf

Tj = 125 °C

135

ns

Eoff

Tj = 125 °C

68

mJ

Rth(j-c)

per IGBT

0.061

K/W

Inverse diode

VF = VEC

IF =450 A

VGE =0V

chip

Tj =25°C

1.6

1.80

V

Tj = 125 °C

1.6

1.8

V

VF0

Tj =25°C

0.9

1

1.1

V

Tj = 125 °C

0.7

0.8

0.9

V

rF

Tj =25°C

1.1

1.3

1.6

mΩ

Tj = 125 °C

1.6

1.8

2.0

mΩ

IRRM

IF =450 A

di/dtoff = 8500 A/µs

VGE =-15 V

VCC = 600 V

Tj = 125 °C

580

A

Qrr

Tj = 125 °C

130

µC

Err

Tj = 125 °C

60

mJ

Rth(j-c)

per diode

0.11

K/W

Freewheeling diode

VF = VEC

IF =450 A

VGE =0V

chip

Tj =25°C

1.6

1.8

V

Tj = 125 °C

1.6

1.8

V

VF0

Tj =25°C

0.9

1

1.1

V

Tj = 125 °C

0.7

0.8

0.9

V

rF

Tj =25°C

1.1

1.3

1.6

mΩ

Tj = 125 °C

1.6

1.8

2.0

mΩ

IRRM

IF =450 A

di/dtoff = 8500 A/µs

VGE =-15 V

VCC = 600 V

Tj = 125 °C

580

A

Qrr

Tj = 125 °C

130

µC

Err

Tj = 125 °C

60

mJ

Rth(j-c)

per diode

0.11

K/W

Module

LCE

20

nH

RCC'+EE'

res., terminal-chip

TC =25°C

0.7

mΩ

TC = 125 °C

1mΩ

Rth(c-s)

per module

0.04

K/W

Ms

to heat sink (M5)

3

5

Nm

Mt

to terminals (M6)

2.5

5

Nm

w

300

g

Temperatur Sensor

R100

Tc=100°C (R25=5 kΩ)

493 ± 5%

Ω

B100/125

R(T)=R100exp[B100/125(1/T-1/T100)];

T[K];

3550

±2%

K

Characteristics

Symbol

Conditions

min.

typ.

max.

Unit

SEMiX® 3s

GAR

Trench IGBT Modules

SEMiX703GAR126HDs

Features

• Homogeneous Si

• Trench = Trenchgate technology

•VCE(sat) with positive temperature

coefficient

• High short circuit capability

• UL recognised file no. E63532

Typical Applications*

• AC inverter drives

•UPS

• Electronic Welding

Remarks

• Case temperatur limited to TC=125°C

max.

• Not for new design

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