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SEMIX353GB176HDS Datasheet(PDF) 2 Page - Semikron International |
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SEMIX353GB176HDS Datasheet(HTML) 2 Page - Semikron International |
2 / 6 page SEMiX353GB176HDs 2 Rev. 12 – 16.12.2009 © by SEMIKRON Characteristics Symbol Conditions min. typ. max. Unit Inverse diode VF = VEC IF =225 A VGE =0V chip Tj =25°C 1.6 1.75 V Tj = 125 °C 1.5 1.7 V VF0 Tj =25°C 0.9 1.1 1.3 V Tj = 125 °C 0.7 0.9 1.1 V rF Tj =25°C 2.0 2.0 2.0 mΩ Tj = 125 °C 2.7 2.7 2.7 mΩ IRRM IF =225 A di/dtoff = 4000 A/µs VGE =-15 V VCC = 1200 V Tj = 125 °C 280 A Qrr Tj = 125 °C 83 µC Err Tj = 125 °C 45 mJ Rth(j-c) per diode 0.13 K/W Module LCE 20 nH RCC'+EE' res., terminal-chip TC =25°C 0.7 mΩ TC = 125 °C 1mΩ Rth(c-s) per module 0.04 K/W Ms to heat sink (M5) 3 5 Nm Mt to terminals (M6) 2.5 5 Nm Nm w 300 g Temperatur Sensor R100 Tc=100°C (R25=5 kΩ) 493 ± 5% Ω B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 3550 ±2% K SEMiX® 3s GB Trench IGBT Modules SEMiX353GB176HDs Features • Homogeneous Si • Trench = Trenchgate technology •VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Typical Applications* • AC inverter drives •UPS • Electronic welders |
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