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SEMIX353GB176HDS Datasheet(PDF) 1 Page - Semikron International |
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SEMIX353GB176HDS Datasheet(HTML) 1 Page - Semikron International |
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1 / 6 page  SEMiX353GB176HDs © by SEMIKRON Rev. 12 – 16.12.2009 1 SEMiX® 3s GB Trench IGBT Modules SEMiX353GB176HDs Features • Homogeneous Si • Trench = Trenchgate technology •VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Typical Applications* • AC inverter drives •UPS • Electronic welders Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1700 V IC Tj = 150 °C Tc =25°C 353 A Tc =80°C 251 A ICnom 225 A ICRM ICRM = 2xICnom 450 A VGES -20 ... 20 V tpsc VCC = 1000 V VGE ≤ 20 V VCES ≤ 1700 V Tj = 125 °C 10 µs Tj -55 ... 150 °C Inverse diode IF Tj = 150 °C Tc =25°C 428 A Tc =80°C 289 A IFnom 225 A IFRM IFRM = 2xIFnom 450 A IFSM tp = 10 ms, sin 180°, Tj =25°C 1800 A Tj -40 ... 150 °C Module It(RMS) 600 A Tstg -40 ... 125 °C Visol AC sinus 50Hz, t = 1 min 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC =225 A VGE =15V chiplevel Tj =25°C 22.45 V Tj = 125 °C 2.45 2.9 V VCE0 Tj =25°C 11.2 V Tj = 125 °C 0.9 1.1 V rCE VGE =15V Tj =25°C 4.4 5.6 mΩ Tj = 125 °C 6.9 8.0 mΩ VGE(th) VGE=VCE, IC = 9 mA 5.2 5.8 6.4 V ICES VGE =0V VCE = 1700 V Tj =25°C 0.1 0.3 mA Tj = 125 °C mA Cies VCE =25 V VGE =0V f=1MHz 19.9 nF Coes f=1MHz 0.83 nF Cres f=1MHz 0.66 nF QG VGE =- 8 V...+ 15 V 2100 nC RGint Tj =25°C 2.83 Ω td(on) VCC = 1200 V IC =225 A RG on =5.6 Ω RG off =5.6 Ω Tj = 125 °C 250 ns tr Tj = 125 °C 75 ns Eon Tj = 125 °C 155 mJ td(off) Tj = 125 °C 930 ns tf Tj = 125 °C 180 ns Eoff Tj = 125 °C 85 mJ Rth(j-c) per IGBT 0.086 K/W |
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