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2N2222 Datasheet(PDF) 2 Page - Comset Semiconductor |
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2N2222 Datasheet(HTML) 2 Page - Comset Semiconductor |
2 / 3 page PNP 2N2907 – 2N2907A NPN 2N2222 – 2N2222A COMSET SEMICONDUCTORS 3 /3 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit VCB=-50 V, IE=0V 2N2907A - - -10 ICBO Collector Cutoff Current VCB=-50 V, IE=0V 2N2907 - - -20 nA VCB=-50 V, IE=0V, Tj=150°C 2N2907A - - -10 ICBO Collector Cutoff Current VCB=-50 V, IE=0V, Tj=150°C 2N2907 - - -20 µA 2N2907A ICEX Collector Cutoff Current VCE=-30 V, VBE=0.5V 2N2907 - - -50 nA 2N2907A -60 - - VCEO Collector Emitter Breakdown Voltage IC=-10 mA, IB=0 2N2907 -40 - - V 2N2907A -60 - - VCBO Collector Base Breakdown Voltage IC=-10 µA, IE=0 2N2907 -60 - - V 2N2907A -5 - - VEBO Emitter Base Breakdown Voltage IE=-10 µA, IC=0 2N2907 -5 - - V 2N2907A IC=-0.1 mA, VCE=-10 V 2N2907 75 - - 2N2907A IC=-1 mA, VCE=-10 V 2N2907 100 - - 2N2907A IC=-10 mA, VCE=-10 V 2N2907 100 - - 2N2907A IC=-150 mA, VCE=-10 V 2N2907 100 - 300 2N2907A 50 - - hFE DC Current Gain IC=-500 mA, VCE=-10 V (1) 2N2907 30 - - - 2N2907A - - -0.4 IC=-150 mA, IB=-15 mA 2N2907 - - -0.4 2N2907A - - -1.6 VCE(SAT) Collector-Emitter saturation Voltage (1) IC=-500 mA, IB=-50 mA 2N2907 - - -1.6 2N2907A - - -1.3 IC=-150 mA, IB=-15 mA 2N2907 - - -1.3 2N2907A - - -2.6 VBE(SAT) Base-Emitter saturation Voltage (1) IC=-500 mA, IB=-50 mA 2N2907 - - -2.6 V Symbol Ratings Test Condition(s) Min Typ Mx Unit 2N2907A 200 - - fT Transition frequency IC=-50 mA, VCE=-20 V f= 100MHz 2N2907 200 - - MHz Symbol Ratings Test Condition(s) Min Typ Mx Unit td Delay time 2N2907A - - 10 tr Rise time IC=-150 mA ,IB =-15 mA -VCC=-30 V 2N2907 - - 40 ns 2N2907A CC Collector capacitance IE= Ie = 0 ,VCB=-10 V f = 100kHz 2N2907 - - 8 pF 2N2907A CE Emitter capacitance IC= Ic = 0 ,VEB=-0.5 V f = 100kHz 2N2907 - - 30 pF |
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