2N1613 datasheet(2/3 Pages) COMSET

Part #	2N1613

Description	SILICON PLANAR EPITAXIAL TRANSISTORS

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Manufacturer	COMSET [Comset Semiconductor]

Direct Link	http://comset.halfin.com

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NPN 2N1613 – 2N1711

COMSET SEMICONDUCTORS

2

/3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Mx

Unit

VCE=60 V, IE=0

-

10

nA

ICBO

Collector Cutoff Current

VCE=60 V, IE=0, Tamb =

150°C

-

10

µA

2N1613 VEB=5 V

-

10

IEB0

Emitter Cutoff Current

2N1711 VEB=5 V

-

5

nA

VCBO

Collector Base Breakdown Voltage

IC=0.1 mA

75

-

V

VCER(*)

Collector Emitter Breakdown

Voltage

IC=10 mA , RBE=10 Ω

50

-

V

VEBO

Emitter Base Breakdown Voltage

IE=100 µA , IC=0

7

-

V

VCE(SAT)(*) Collector-Emitter saturation Voltage

IC=150 mA , IB=15 mA

-

1.5

V

VBE(SAT)(*) Base-Emitter saturation Voltage

IC=150 mA , IB=15 mA

-

1.3

V

IC=0.01 mA , VCE=10 V

-

35

-

IC=0.1 mA , VCE=10 V

20

-

IC=10 mA , VCE=10 V

35

-

IC=150 mA , VCE=10 V

40

-

120

IC=500 mA , VCE=10 V

20

-

2N1613

IC=10 mA , VCE=10 V,

Tamb=55°C

20

-

IC=0.01 mA , VCE=10 V

20

-

IC=0.1 mA , VCE=10 V

35

-

IC=10 mA , VCE=10 V

75

130

-

IC=150 mA , VCE=10 V

100

-

300

IC=500 mA , VCE=10 V

40

75

-

hFE(*)

DC Current Gain

2N1711

IC=10 mA , VCE=10 V,

Tamb=55°C

35

65

-

2N1613

IC=1 mA , VCE=10 V,

f = 1 kHz

30

-

150

hfe

Small Signal Current Gain

2N1711

IC=1 mA , VCE=10 V,

f = 1 kHz

70

-

300

-

2N1613

IC=1 mA , VCE=5 V,

f = 1 kHz

-

2.2

-

hje

Input Impedance

2N1711

IC=1 mA , VCE =5 V,

f = 1 kHz

-

4.4

-

k

Ω

2N1613

IC=1 mA , VCE =5 V,

f = 1 kHz

-

3.6x10

-4

-

hre

Reverse VoltageRatio

2N1711

IC=1 mA , VCE =5 V,

f = 1 kHz

-

7.3x10

-4

-

2N1613

IC=1 mA , VCE =5 V,

f = 1 kHz

-

12.5

-

hoe

Output Admitance

2N1711

IC=1 mA , VCE =5 V,

f = 1 kHz

-

23.8

-

µS

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