NTUD3171PZ datasheet(3/5 Pages) ONSEMI

Part #	NTUD3171PZ

Description	Small Signal MOSFET ??0 V, ??00 mA, Dual P?묬hannel, 1.0 x 1.0 mm SOT??63 Package

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NTUD3171PZ

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TYPICAL CHARACTERISTICS

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

VGS, GATE−TO−SOURCE VOLTAGE (V)

5

4

3

2

1

0

0.04

0.20

0.28

0.36

4

2

1

0

0.04

0.16

0.28

0.36

Figure 3. On−Resistance vs. Gate Voltage

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

VGS, GATE−TO−SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

5

4

3

2

1

0

4

8

12

0.35

0.30

0.25

0.20

0.15

0.10

0.05

0

1

2

3

4

Figure 5. On−Resistance Variation with

Temperature

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

TJ, JUNCTION TEMPERATURE (°C)

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

125

100

75

50

25

0

−25

−50

0.50

0.75

1.00

1.25

1.50

1.75

20

16

12

8

4

0

10

100

1000

10,000

VGS = 2.2 thru 5 V

TJ = 25°C

1.8 V

1.6 V

1.4 V

1.2 V

TJ = 25°C

TJ = 125°C

TJ = −55°C

VDS ≥ 5 V

ID = 200 mA

TJ = 25°C

VGS = 2.5 V

VGS = 4.5 V

ID = 200 mA

VGS = 0 V

TJ = 125°C

TJ = 150°C

150

0.08

0.12

0.16

0.24

0.32

2.0 V

3

0.08

0.12

0.20

0.24

0.32

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