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NTUD3171PZ Datasheet(PDF) 2 Page - ON Semiconductor |
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NTUD3171PZ Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 5 page NTUD3171PZ http://onsemi.com 2 THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Ambient – Steady State (Note 3) RqJA 1000 °C/W Junction−to−Ambient – t = 5 s (Note 3) 600 3. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz Cu. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −20 V Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = −5.0 V TJ = 25°C −50 nA VGS = 0 V, VDS = −5.0 V TJ = 85°C −100 VGS = 0 V, VDS = −16 V TJ = 25°C −200 Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±5.0 V ±100 nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = −250 mA −0.4 −1.0 V Drain−to−Source On Resistance RDS(ON) VGS = −4.5 V, ID = −100 mA 2.0 5.0 W VGS = −2.5 V, ID = −50 mA 2.6 6.0 VGS = −1.8 V, ID = −20 mA 3.4 7.0 VGS = −1.5 V, ID = −10 mA 4.0 10 VGS = −1.2 V, ID = −1.0 mA 6.0 Forward Transconductance gFS VDS = −5.0 V, ID = −125 mA 0.35 S Source−Drain Diode Voltage VSD VGS = 0 V, IS = −10 mA −0.6 −1.0 V CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS f = 1 MHz, VGS = 0 V VDS = −15 V 13.5 pF Output Capacitance COSS 3.8 Reverse Transfer Capacitance CRSS 2.0 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4) Turn−On Delay Time td(ON) VGS = −4.5 V, VDD = −15 V, ID = −200 mA, RG = 2.0 W 26 ns Rise Time tr 46 Turn−Off Delay Time td(OFF) 196 Fall Time tf 145 4. Switching characteristics are independent of operating junction temperatures ORDERING INFORMATION Device Package Shipping† NTUD3171PZT5G SOT−963 (Pb−Free) 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. |
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