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NTUD3170NZ Datasheet(PDF) 4 Page - ON Semiconductor |
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NTUD3170NZ Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 5 page NTUD3170NZ http://onsemi.com 4 TYPICAL CHARACTERISTICS Figure 7. Capacitance Variation Figure 8. Resistive Switching Time Variation vs. Gate Resistance GATE−TO−SOURCE AND DRAIN−TO−SOURCE VOLTAGE (V) RG, GATE RESISTANCE (W) 20 15 10 5 0 0 2.50 5.00 7.50 10.0 12.5 15.0 20.0 100 10 1 1 10 100 1000 Figure 9. Diode Forward Voltage vs. Current VSD, SOURCE−TO−DRAIN VOLTAGE (V) 1 0.8 0.6 0.4 0.2 0 0 0.025 0.050 0.075 0.100 0.125 0.175 0.200 17.5 VGS = 0 V TJ = 25°C Ciss Coss Crss VDD = 10 V ID = 200 mA VGS = 4.5 V td(off) td(on) tr tf 0.150 VGS = 0 V TJ = 25°C |
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