NTUD3170NZ datasheet(3/5 Pages) ONSEMI

Part #	NTUD3170NZ

Description	Small Signal MOSFET 20 V, 220 mA, Dual N?묬hannel, 1.0 mm x 1.0 mm SOT??63 Package

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NTUD3170NZ

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TYPICAL CHARACTERISTICS

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

VGS, GATE−TO−SOURCE VOLTAGE (V)

5

4

3

2

1

0

0.1

0.2

0.3

0.4

3

2

1

0

0.1

0.2

0.3

0.4

Figure 3. On−Resistance vs. Gate Voltage

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

VGS, GATE−TO−SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

5

4

3

2

1

0

1

2

3

4

0.35

0.30

0.40

0.25

0.20

0.15

0.10

0.05

0

0.25

0.50

0.75

1.00

1.25

1.50

Figure 5. On−Resistance Variation with

Temperature

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

TJ, JUNCTION TEMPERATURE (°C)

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

125

100

75

50

25

0

−25

−50

0.50

0.75

1.00

1.25

1.50

1.75

20

16

12

8

4

0

10

100

1000

10,000

VGS = 2 thru 5 V

TJ = 25°C

1.8 V

1.6 V

1.4 V

1.2 V

TJ = 25°C

TJ = 125°C

TJ = −55°C

VDS ≥ 5 V

ID = 220 mA

TJ = 25°C

VGS = 2.5 V

VGS = 4.5 V

ID = 100 mA

VGS = 0 V

TJ = 125°C

TJ = 150°C

150

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