NTUD3169CZ datasheet(2/8 Pages) ONSEMI

Part #	NTUD3169CZ

Description	Small Signal MOSFET 20 V, 220 mA / ??00 mA, Complementary, 1.0 x 1.0 mm SOT??63 Package

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NTUD3169CZ

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THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

Unit

Junction−to−Ambient – Steady State, Minimum Pad (Note 3)

RqJA

1000

°C/W

Junction−to−Ambient – t v 5 s (Note 3)

600

3. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz. Cu.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

N/P

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

N

VGS = 0 V

ID = 250 mA

20

V

P

ID = −250 mA

−20

Zero Gate Voltage Drain Current

IDSS

N

VGS = 0 V, VDS = 5.0 V

TJ = 25°C

50

nA

TJ = 85°C

200

P

VGS = 0 V, VDS = −5.0 V

TJ = 25°C

−50

TJ = 85°C

−200

Zero Gate Voltage Drain Current

IDSS

N

VGS = 0 V, VDS = 16 V

TJ = 25°C

100

nA

P

VGS = 0 V, VDS= −16 V

−100

Gate−to−Source Leakage Current

IGSS

N

VDS = 0 V, VGS = ±5.0 V

±100

nA

P

±100

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

VGS(TH)

N

VGS = VDS

ID = 250 mA

0.4

1.0

V

P

ID = −250 mA

−0.4

−1.0

Drain−to−Source On Resistance

RDS(on)

N

VGS = 4.5 V, ID = 100 mA

0.75

1.5

W

P

VGS = −4.5V, ID = −100 mA

2.0

5.0

N

VGS = 2.5 V, ID = 50 mA

1.0

2.0

P

VGS = −2.5V, ID = −50 mA

2.6

6.0

N

VGS = 1.8 V, ID = 20 mA

1.4

3.0

P

VGS = −1.8V, ID = −20 mA

3.4

7.0

N

VGS = 1.5 V, ID = 10 mA

1.8

4.5

P

VGS = −1.5 V, ID = −10 mA

4.0

10

N

VGS = 1.2 V, ID = 1.0 mA

2.8

P

VGS = −1.2 V, ID = −1.0 mA

6.0

Forward Transconductance

gFS

N

VDS = 5.0 V, ID = 125 mA

0.48

S

P

VDS = −5.0 V, ID = −125 mA

0.35

Source−Drain Diode Voltage

VSD

N

VGS = 0 V, IS = 10 mA

TJ = 25°C

0.6

1.0

V

P

VGS = 0 V, IS = −10 mA

−0.6

−1.0

CAPACITANCES

Input Capacitance

CISS

N

f = 1 MHz, VGS = 0 V

VDS = 15 V

12.5

pF

Output Capacitance

COSS

3.6

Reverse Transfer Capacitance

CRSS

2.6

Input Capacitance

CISS

P

f = 1 MHz, VGS = 0 V

VDS = −15 V

13.5

Output Capacitance

COSS

3.8

Reverse Transfer Capacitance

CRSS

2.0

4. Switching characteristics are independent of operating junction temperatures

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