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EBD52RC8AKFA Datasheet(PDF) 1 Page - Elpida Memory

Part # EBD52RC8AKFA
Description  512MB Registered DDR SDRAM DIMM
Download  18 Pages
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Manufacturer  ELPIDA [Elpida Memory]
Direct Link  http://www.elpida.com/en
Logo ELPIDA - Elpida Memory

EBD52RC8AKFA Datasheet(HTML) 1 Page - Elpida Memory

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Document No. E0375E10 (Ver. 1.0)
Date Published April 2003 (K) Japan
URL: http://www.elpida.com
Elpida Memory,Inc. 2003
PRELIMINARY DATA SHEET
512MB Registered DDR SDRAM DIMM
EBD52RC8AKFA (64M words
×××× 72 bits, 2 Ranks)
Description
The EBD52RC8AKFA is a 64M words
× 72 bits, 2
ranks Double Data Rate (DDR) SDRAM Module,
mounting 18 pieces of DDR SDRAM sealed in TSOP
package. Read and write operations are performed at
the cross points of the CK and the /CK. This high-
speed data transfer is realized by the 2-bit prefetch-
pipelined architecture. Data strobe (DQS) both for read
and write are available for high speed and reliable data
bus design. By setting extended mode register, the on-
chip Delay Locked Loop (DLL) can be set enable or
disable. This module provides high density mounting
without utilizing surface mount technology. Decoupling
capacitors are mounted beside each TSOP on the
module board.
Features
• 184-pin socket type dual in line memory module
(DIMM)
 PCB height: 30.48mm
 Lead pitch: 1.27mm
• 2.5V power supply
• Data rate: 333Mbps (max.)
• 2.5 V (SSTL_2 compatible) I/O
• Double Data Rate architecture; two data transfers per
clock cycle
• Bi-directional, data strobe (DQS) is transmitted
/received with data, to be used in capturing data at
the receiver
• Data inputs and outputs are synchronized with DQS
• 4 internal banks for concurrent operation
(Component)
• DQS is edge aligned with data for READs; center
aligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK
transitions
• Commands entered on each positive CK edge; data
referenced to both edges of DQS
• Data mask (DM) for write data
• Auto precharge option for each burst access
• Programmable burst length: 2, 4, 8
• Programmable /CAS latency (CL): 2, 2.5
• Refresh cycles: (8192 refresh cycles /64ms)
 7.8µs maximum average periodic refresh interval
• 2 variations of refresh
 Auto refresh
 Self refresh
• 1 piece of PLL clock driver, 1 piece of register driver
and 1 piece of serial EEPROM (2k bits EEPROM) for
Presence Detect (PD)


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