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EBD52RC8AKFA Datasheet(PDF) 5 Page - Elpida Memory |
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EBD52RC8AKFA Datasheet(HTML) 5 Page - Elpida Memory |
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5 / 18 page  EBD52RC8AKFA Preliminary Data Sheet E0375E10 (Ver. 1.0) 5 Serial PD Matrix* 1 Byte No. Function described Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments 0 Number of bytes utilized by module manufacturer 1 0 0 0 0 0 0 0 80H 128 1 Total number of bytes in serial PD device 0 0 0 0 1 0 0 0 08H 256 byte 2 Memory type 0 0 0 0 0 1 1 1 07H SDRAM DDR 3 Number of row address 0 0 0 0 1 1 0 1 0DH 13 4 Number of column address 0 0 0 0 1 0 1 0 0AH 10 5 Number of DIMM ranks 0 0 0 0 0 0 1 0 02H 2 6 Module data width 0 1 0 0 1 0 0 0 48H 72 bits 7 Module data width continuation 0 0 0 0 0 0 0 0 00H 0 (+) 8 Voltage interface level of this assembly 0 0 0 0 0 1 0 0 04H SSTL 2.5V 9 DDR SDRAM cycle time, CL = X 0 1 1 0 0 0 0 0 60H CL = 2.5* 3 10 SDRAM access from clock (tAC) 0 1 1 1 0 0 0 0 70H 0.70ns* 3 11 DIMM configuration type 0 0 0 0 0 0 1 0 02H ECC 12 Refresh rate/type 1 0 0 0 0 0 1 0 82H 7.8 µs Self refresh 13 Primary SDRAM width 0 0 0 0 1 0 0 0 08H × 8 14 Error checking SDRAM width 0 0 0 0 1 0 0 0 08H × 8 15 SDRAM device attributes: Minimum clock delay back-to-back column access 0 0 0 0 0 0 0 1 01H 1 CLK 16 SDRAM device attributes: Burst length supported 0 0 0 0 1 1 1 0 0EH 2, 4, 8 17 SDRAM device attributes: Number of banks on SDRAM device 0 0 0 0 0 1 0 0 04H 4 18 SDRAM device attributes: /CAS latency 0 0 0 0 1 1 0 0 0CH 2, 2.5 19 SDRAM device attributes: /CS latency 0 0 0 0 0 0 0 1 01H 0 20 SDRAM device attributes: /WE latency 0 0 0 0 0 0 1 0 02H 1 21 SDRAM module attributes 0 0 1 0 0 1 1 0 26H Registered 22 SDRAM device attributes: General 1 1 0 0 0 0 0 0 C0H ± 0.2V 23 Minimum clock cycle time at CLX - 0.5 0 1 1 1 0 1 0 1 75H CL = 2* 3 24 Maximum data access time (tAC) from clock at CLX - 0.5 0 1 1 1 0 0 0 0 70H 0.70ns* 3 25 Minimum clock cycle time at CLX - 1 0 0 0 0 0 0 0 0 00H 26 Maximum data access time (tAC) from clock at CLX - 1 0 0 0 0 0 0 0 0 00H 27 Minimum row precharge time (tRP) -6B 0 1 0 0 1 0 0 0 48H 18ns 28 Minimum row active to row active delay (tRRD) 0 0 1 1 0 0 0 0 30H 12ns 29 Minimum /RAS to /CAS delay (tRCD) 0 1 0 0 1 0 0 0 48H 18ns 30 Minimum active to precharge time (tRAS) 0 0 1 0 1 0 1 0 2AH 42ns 31 Module rank density 0 1 0 0 0 0 0 0 40H 2 ranks 256MB 32 Address and command setup time before clock (tIS) 0 1 1 1 0 1 0 1 75H 0.75ns* 3 33 Address and command hold time after clock (tIH) 0 1 1 1 0 1 0 1 75H 0.75ns* 3 |
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