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EBD51RC4AAFA Datasheet(PDF) 13 Page - Elpida Memory |
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EBD51RC4AAFA Datasheet(HTML) 13 Page - Elpida Memory |
13 / 17 page EBD10RD4ABFA Preliminary Data Sheet E0274E40 (Ver. 4.0) 13 -6B -7A -7B Parameter Symbol min. max min. max min. max Unit Notes Address and control input hold time tIH 0.75 — 0.9 — 0.9 — ns 8 Address and control input pulse width tIPW 2.2 — 2.2 — 2.2 — ns 7 Mode register set command cycle time tMRD 2 — 2 — 2 — tCK Active to Precharge command period tRAS 42 120000 45 120000 45 120000 ns Active to Active/Auto refresh command period tRC 60 — 65 — 65 — ns Auto refresh to Active/Auto refresh command period tRFC 72 — 75 — 75 — ns Active to Read/Write delay tRCD 18 — 20 — 20 — ns Precharge to active command period tRP 18 — 20 — 20 — ns Active to auto precharge delay tRAP tRCD min. — tRCD min. — tRCD min. — ns Active to active command period tRRD 12 — 15 — 15 — ns Write recovery time tWR 15 — 15 — 15 — ns Auto precharge write recovery and precharge time tDAL (tWR/tCK)+ (tRP/tCK) — (tWR/tCK)+ (tRP/tCK) — (tWR/tCK)+ (tRP/tCK) — tCK 13 Internal write to Read command delay tWTR 1 — 1 — 1 — tCK Average periodic refresh interval tREF — 7.8 — 7.8 — 7.8 µs Notes: 1. All the AC parameters listed in this data sheet is component specifications. For AC testing conditions, refer to the corresponding component data sheet. 2. This parameter defines the signal transition delay from the cross point of CK and /CK. The signal transition is defined to occur when the signal level crossing VTT. 3. The timing reference level is VTT. 4. Output valid window is defined to be the period between two successive transition of data out or DQS (read) signals. The signal transition is defined to occur when the signal level crossing VTT. 5. tHZ is defined as DOUT transition delay from Low-Z to High-Z at the end of read burst operation. The timing reference is cross point of CK and /CK. This parameter is not referred to a specific DOUT voltage level, but specify when the device output stops driving. 6. tLZ is defined as DOUT transition delay from High-Z to Low-Z at the beginning of read operation. This parameter is not referred to a specific DOUT voltage level, but specify when the device output begins driving. 7. Input valid windows is defined to be the period between two successive transition of data input or DQS (write) signals. The signal transition is defined to occur when the signal level crossing VREF. 8. The timing reference level is VREF. 9. The transition from Low-Z to High-Z is defined to occur when the device output stops driving. A specific reference voltage to judge this transition is not given. 10. tCK (max.) is determined by the lock range of the DLL. Beyond this lock range, the DLL operation is not assured. 11. tCK = tCK (min.) when these parameters are measured. Otherwise, absolute minimum values of these values are 10% of tCK. 12. VDD is assumed to be 2.5V ± 0.2V. VDD power supply variation per cycle expected to be less than 0.4V/400 cycle. 13. tDAL = (tWR/tCK)+(tRP/tCK) For each of the terms above, if not already an integer, round to the next highest integer. Example: For –7A Speed at CL = 2.5, tCK = 7.5ns, tWR = 15ns and tRP= 20ns, tDAL = (15ns/7.5ns) + (20ns/7.5ns) = (2) + (3) tDAL = 5 clocks |
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