EDS1232ECBH-9ATT datasheet(4/50 Pages) ELPIDA

Part #	EDS1232ECBH-9ATT

Description	128M bits SDRAM 128M bits SDRAM

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Manufacturer	ELPIDA [Elpida Memory]

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EDS1232ECBH-9ATT

Preliminary Data Sheet E0878E10 (Ver. 1.0)

4

Electrical Specifications

• All voltages are referenced to VSS (GND).

• After power up, execute power up sequence and initialization sequence before proper device operation is achieved

(refer to the Power up sequence).

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Note

Voltage on any pin relative to VSS

VT

–0.5 to VDD +0.3 (≤ 2.4 max.)

V

Supply voltage relative to VSS

VDD

–0.5 to +2.4

V

Short circuit output current

IOS

50

mA

Power dissipation

PD

1.0

W

Operating ambient temperature

TA

–20 to +85

°C

Storage temperature

Tstg

–55 to +125

°C

Caution

Exposing the device to stress above those listed in Absolute Maximum Ratings could cause

permanent damage. The device is not meant to be operated under conditions outside the limits

described in the operational section of this specification. Exposure to Absolute Maximum Rating

conditions for extended periods may affect device reliability.

Recommended DC Operating Conditions (TA = –20

°C to +85°C)

Parameter

Symbol

min.

max.

Unit

Notes

Supply voltage

VDD, VDDQ

1.7

1.9

V

1

VSS, VSSQ

0

V

2

Input high voltage

VIH

0.8

× VDD

VDD + 0.3

V

3

Input low voltage

VIL

–0.3

0.3

V

4

Notes: 1. The supply voltage with all VDD and VDDQ pins must be on the same level.

2. The supply voltage with all VSS and VSSQ pins must be on the same level.

3. The peak of VIH = VDD + 0.5V (pulse width at VIH (max.) ≤ 3ns).

4. The bottom of VIL = VSS – 1.0V (pulse width at VIL (min.) ≤ 3ns).

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