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EDS1232ECBH-9ATT Datasheet(PDF) 39 Page - Elpida Memory |
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EDS1232ECBH-9ATT Datasheet(HTML) 39 Page - Elpida Memory |
39 / 50 page EDS1232ECBH-9ATT Preliminary Data Sheet E0878E10 (Ver. 1.0) 39 DQM Control The DQM mask the DQ data. The UDQM and LDQM mask the upper and lower bytes of the DQ data, respectively. The timing of UDQM/LDQM is different during reading and writing. Reading When data is read, the output buffer can be controlled by DQM. By setting DQM to Low, the output buffer becomes Low-Z, enabling data output. By setting DQM to High, the output buffer becomes High-Z, and the corresponding data is not output. However, internal reading operations continue. The latency of DQM during reading is 2 clocks. Writing Input data can be masked by DQM. By setting DQM to Low, data can be written. In addition, when DQM is set to High, the corresponding data is not written, and the previous data is held. The latency of DQM during writing is 0 clock. CLK DQ out 0 out 1 lDOD = 2 Latency out 3 DQM High-Z Reading CLK DQ in 0 in 1 lDID = 0 Latency in 3 DQM Writing |
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