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EDS1232ECBH-9ATT Datasheet(PDF) 37 Page - Elpida Memory |
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EDS1232ECBH-9ATT Datasheet(HTML) 37 Page - Elpida Memory |
37 / 50 page EDS1232ECBH-9ATT Preliminary Data Sheet E0878E10 (Ver. 1.0) 37 Write command to Precharge command interval (same bank) When the precharge command is executed for the same bank as the write command that preceded it, the minimum interval between the two commands is 1 clock. However, if the burst write operation is unfinished, the input data must be masked by means of DQM for assurance of the clock defined by tDPL. CLK in A0 in A1 in A2 Command DQ WRIT PRE/PALL DQM tDPL WRITE to PRECHARGE Command Interval (same bank) (BL = 4 (To stop write operation)) CLK in A0 in A1 in A2 Command DQ WRIT PRE/PALL in A3 DQM tDPL WRITE to PRECHARGE Command Interval (same bank) (BL = 4 (To write all data)) |
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