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EDS1232ECBH-9ATT Datasheet(PDF) 24 Page - Elpida Memory

Part # EDS1232ECBH-9ATT
Description  128M bits SDRAM 128M bits SDRAM
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Manufacturer  ELPIDA [Elpida Memory]
Direct Link  http://www.elpida.com/en
Logo ELPIDA - Elpida Memory

EDS1232ECBH-9ATT Datasheet(HTML) 24 Page - Elpida Memory

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EDS1232ECBH-9ATT
Preliminary Data Sheet E0878E10 (Ver. 1.0)
24
Power-up sequence
Power-up sequence
The SDRAM should be goes on the following sequence with power up.
The CLK, CKE, /CS, DQM and DQ pins keep low till power stabilizes.
The CLK pin is stabilized within 100 µs after power stabilizes before the following initialization sequence.
The CKE and DQM is driven to high between power stabilizes and the initialization sequence.
This SDRAM has VDD clamp diodes for CLK, CKE, address, /RAS, /CAS, /WE, /CS, DQM and DQ pins. If these
pins go high before power up, the large current flows from these pins to VDD through the diodes.
Initialization sequence
When 200 µs or more has past after the above power-up sequence, all banks must be precharged using the
precharge command (PALL). After tRP delay, set 8 or more auto refresh commands (REF). Set the mode register
set command (MRS) to initialize the mode register. If necessary, issue the extended mode register set command
(EMRS) to change the default value of extended mode register after lMRD of the MRS command. We recommend
that by keeping DQM and CKE to High, the output buffer becomes High-Z during Initialization sequence, to avoid DQ
bus contention on memory system formed with a number of device.
VDD, VDDQ
Power up sequence
Initialization sequence
100
µs
0 V
Low
Low
Low
CKE, DQM
CLK
/CS, DQ
200
µs
Power stabilize
Power-up sequence and Initialization sequence


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