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EDS1232ECBH-9ATT Datasheet(PDF) 7 Page - Elpida Memory |
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EDS1232ECBH-9ATT Datasheet(HTML) 7 Page - Elpida Memory |
7 / 50 page EDS1232ECBH-9ATT Preliminary Data Sheet E0878E10 (Ver. 1.0) 7 AC Characteristics (TA = –20 °C to +85°C, VDD, VDDQ = 1.8V ± 0.1V, VSS, VSSQ = 0V) -9A Parameter Symbol min. max. Unit Notes System clock cycle time (CL = 2) tCK 9 — ns 1 (CL = 3) tCK 9 — ns 1 CLK high pulse width tCH 3 — ns 1, 5 CLK low pulse width tCL 3 — ns 1, 5 Access time from CLK tAC — 7 ns 1, 2, 5, 6 Data-out hold time tOH 2.5 — ns 1, 2, 5, 6 CLK to Data-out low impedance tLZ 0 — ns 1, 2, 3, 5, 6 CLK to Data-out high impedance tHZ — 7 ns 1, 4, 6 Input setup time tSI 2 — ns 1, 5 Input hold time tHI 1 — ns 1, 5 Ref/Active to Ref/Active command period tRC 68 — ns 1 Active to Precharge command period tRAS 50 120000 ns 1 Active command to column command (same bank) tRCD 18 — ns 1 Precharge to active command period tRP 18 — ns 1 Write recovery or data-in to precharge lead time tDPL 18 — ns 1 Last data into active latency tDAL 2CLK + 18ns — Active (a) to Active (b) command period tRRD 18 — ns 1 Transition time (rise and fall) tT 0.5 1.0 ns Refresh period (4096 refresh cycles) tREF — 64 ms Notes: 1. AC measurement assumes tT = 0.5ns. Reference level for timing of input signals is 0.5 × VDDQ. 2. Access time is measured at 0.5 × VDDQ. Load condition is CL = 30pF. 3. tLZ (min.) defines the time at which the outputs achieves the low impedance state. 4. tHZ (max.) defines the time at which the outputs achieves the high impedance state. 5. If tT ≥ 1ns, each parameters is changed as follows; tAC, tOH, tLZ: should be added (tT (rise)/2 – 0.5) tCH, tCL, tSI, tHI: should be added {(tT (rise) + tT (fall))/2 – 1} 6. Driver strength is Half condition. |
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