EDS1232ECBH-9ATT datasheet(6/50 Pages) ELPIDA

Part #	EDS1232ECBH-9ATT

Description	128M bits SDRAM 128M bits SDRAM

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Manufacturer	ELPIDA [Elpida Memory]

Direct Link	http://www.elpida.com/en

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EDS1232ECBH-9ATT

Preliminary Data Sheet E0878E10 (Ver. 1.0)

6

DC Characteristics 2 (TA = –20

°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V, VSS, VSSQ = 0V)

Parameter

Symbol

min.

max.

Unit

Test condition

Notes

Input leakage current

ILI

–1

1

µA

0 ≤ VIN ≤ VDD

Output leakage current

ILO

–1.5

1.5

µA

0 ≤ VOUT ≤ VDD, DQ = disable

Output high voltage

VOH

VDD –0.2

—

V

IOH = –0.1 mA

1

Output low voltage

VOL

—

0.2

V

IOL = 0.1 mA

1

Note: 1. Driver strength is Half condition.

Pin Capacitance (TA = 25°C, VDD, VDDQ = 1.8V ± 0.1V)

Parameter

Symbol

Pins

min.

typ.

max.

Unit

Notes

Input capacitance

CI1

CLK

2.0

—

3.5

pF

1, 2, 4

CI2

Address, CKE, /CS,

/RAS, /CAS, /WE,

DQM

2.0

—

3.5

pF

1, 2, 4

Data input/output

capacitance

CI/O

DQ

3.0

—

5.5

pF

1, 2, 3, 4

Notes: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.

2. Measurement condition: f = 1MHz, 0.5

× VDDQ, 200mV swing.

3. DQM = VIH to disable DOUT.

4. This parameter is sampled and not 100% tested.

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