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CRS14 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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CRS14 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page ![]() CRS14 2009-04-20 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit VFM (1) IFM = 0.1 A (pulse test) ⎯ 0.35 ⎯ VFM (2) IFM = 1.0 A (pulse test) ⎯ 0.415 ⎯ Peak forward voltage VFM (3) IFM = 2.0 A (pulse test) ⎯ 0.44 0.49 V IRRM (1) VRRM = 5 V (pulse test) ⎯ 0.8 ⎯ Repetitive peak reverse current IRRM (2) VRRM = 30 V (pulse test) ⎯ 10 50 μA Junction capacitance Cj VR = 10 V, f = 1.0 MHz ⎯ 90 ⎯ pF Device mounted on a ceramic board (board size: 50 mm × 50 mm) (soldering land: 2 mm × 2 mm) (board thickness: 0.64 mm) ⎯ ⎯ 70 Thermal resistance (junction to ambient) Rth (j-a) Device mounted on a glass-epoxy board (board size: 50 mm × 50 mm) (soldering land: 6 mm × 6 mm) (board thickness: 1.6 mm) ⎯ ⎯ 140 °C/W Thermal resistance (junction to lead) Rth (j-ℓ) ⎯ ⎯ ⎯ 20 °C/W |
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