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MCP1631T-E/SS Datasheet(PDF) 6 Page - Microchip Technology

Part # MCP1631T-E/SS
Description  High-Speed, Pulse Width Modulator
Download  34 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

MCP1631T-E/SS Datasheet(HTML) 6 Page - Microchip Technology

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MCP1631/HV/MCP1631V/VHV
DS22063B-page 6
© 2008 Microchip Technology Inc.
External Reference Input
Reference Voltage Input
VREF
0—
AVDD
V
The reference input is capable of
rail-to-rail operation.
Internal Driver)
RDSON P-channel
RDSon_P
—7.2
15
Ω
RDSON N-channel
RDSon_N
—3.8
15
Ω
VEXT Rise Time
TRISE
—2.5
18
ns
CL = 100 pF
Typical for VIN =5V (Note 1)
VEXT Fall Time
TFALL
—2.7
18
ns
CL = 100 pF
Typical for VIN =5V (Note 1)
Error Amplifier (A1)
Input Offset Voltage
VOS
-5
-0.6
+5
mV
A1 Input Bias Current
IBIAS
—0.05
1
µA
Error Amplifier PSRR
PSRR
85.4
dB
VIN = 3.0V to 5.0V, VCM =1.2V
Common Mode Input Range
VCM
GND - 0.3
VIN
V
Common Mode Rejection Ratio
90
dB
VIN =5V, VCM = 0V to 2.5V
Open-loop Voltage Gain
AVOL
80
95
dB
RL =5kΩ to VIN/2,
100 mV < VEAOUT < VIN - 100 mV,
VCM =1.2V
Low-level Output
VOL
25
GND + 65
mV
RL = 5 kΩ to VIN/2
Gain Bandwidth Product
GBWP
3.5
MHz
VIN =5V
Error Amplifier Sink Current
ISINK
412
mA
VIN =5V, VREF =1.2V,
VFB =1.4V, VCOMP =2.0V
Error Amplifier Source Current
ISOURCE
-2
-9.8
mA
VIN =5V, VREF =1.2V,
VFB =1.0V, VCOMP =2.0V,
Absolute Value
Current Sense (CS) Amplifier (A2)
Input Offset Voltage
VOS
-3.0
1.2
+3.0
mV
CS Input Bias Current
IBIAS
—0.13
1
µA
CS Amplifier PSRR
PSRR
65
dB
VIN = 3.0V to 5.0V, VCM = 0.12V,
GAIN = 10
Closed-loop Voltage Gain
A2VCL
—10
V/V
RL =5kΩ to VIN/2,
100 mV < VOUT < VIN - 100 mV,
VCM = +0.12V
Low-level Output
VOL
5
11
GND + 50
mV
RL = 5 kΩ to VIN/2
CS Sink Current
ISINK
517.7
mA
CS Amplifier Source Current
ISOURCE
-5
-19.5
mA
Voltage Sense (VS) Amplifier (A3)
Input Offset Voltage
VOS
-5
0.9
+5
mV
VS Input Bias Current
IBIAS
—0.001
1
µA
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF,
VDD for typical values = 5.0V, TA for typical values = +25°C, TA = -40°C to +125°C for all minimum and maximums.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Note 1:
External Oscillator Input (OSCIN) rise and fall times between 10 ns and 10 µs were determined during device
characterization testing. Signal levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90%
of maximum and minimum values. Not production tested. Additional timing specifications were fully characterized and
specified that are not production tested.
2:
The minimum VIN must meet two conditions: VIN ≥ 3.5V and VIN ≥ (VOUT(MAX) + VDROPOUT(MAX)).
3:
TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * ΔTemperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
4:
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT.
5:
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 3.5V, whichever is greater.


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