For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

12

12 - 208

MMIC VCO w/ DIVIDE-BY-4

8.6 - 10.2 GHz

v03.0609

General Description

Features

Functional Diagram

The HMC734LP5(E) is a GaAs InGaP Heterojunc-

tion Bipolar Transistor (HBT) MMIC VCO. The

HMC734LP5(E) integrates a resonator, negative resis-

tance device, varactor diode and features a divide-by-4

frequency output. The VCO’s phase noise perfor-

mance is excellent over temperature, shock, and pro-

cess due to the oscillator’s monolithic structure. Power

output is +18 dBm typical from a +5V supply voltage.

The prescaler function can be disabled to conserve

current if not required. The voltage controlled oscilla-

tor is packaged in a leadless QFN 5x5 mm surface

mount package, and requires no external matching

components.

Dual Output: Fo = 8.6 - 10.2 GHz

Fo/4 = 2.15 - 2.55 GHz

Pout: +18 dBm

Phase Noise: -100 dBc/Hz @ 100 kHz Typ.

No External Resonator Needed

Typical Applications

The HMC734LP5(E) is ideal for:

• Point-to-Point/Multi-Point Radio

• Test Equipment & Industrial Controls

• SATCOM

• Military End-Use

Parameter

Min.

Typ.

Max.

Units

Frequency Range

Fo

Fo/4

8.6 - 10.2

2.15 - 2.55

GHz

GHz

Power Output

RFOUT

RFOUT/4

15

-8

22

-1

dBm

dBm

SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RFOUT

-100

dBc/Hz

Tune Voltage

Vtune

1

13

V

Supply Current

Icc(Dig) + Icc(Amp) + Icc(RF)

180

218

240

mA

Tune Port Leakage Current (Vtune= 13V)

10

μA

Output Return Loss (RFOUT)

8dB

Harmonics/Subharmonics

1/2

2nd

3rd

66

15

30

dBc

dBc

Pulling (into a 2.0:1 VSWR)

38

MHz pp

Pushing @ Vtune= 5V

30

MHz/V

Frequency Drift Rate

1.1

MHz/°C