© 2004

OSA Opto Light GmbH — Tel. +49-(0)30-65 76 26 83 — Fax +49-(0)30-65 76 26 81 — contact@osa-opto.com

TSN-RED

Item No.: 192220

1.

This specification applies to GaAsP / GaP LED Chips

2.

Structure

2.1

Mesa structure

2.2

Electrodes

p-side (anode)

Au alloy

n-side (cathode)

Au alloy

3.

Outlines (dimensions in microns)

Wire bond contacts can also be circular or square

4.

Electrical and optical characteristics (T=25°C)

Parameter

Symbol

Conditions

min

typ

max

Unit

Forward voltage

2,05

2,50

V

Reverse current

10

µA

Luminous intensity *

3,0

4,0

mcd

Peak wavelength

λ

P

650

nm

* On request, wafers will be delivered according to luminous intensity classes

Brightness measurement at OSA on gold plate

5.

Packing

Dice on adhesive film with 1) wire bond side on top

2) back contact on top

6.

Labeling

Type

Lot No.

Quantity

min

max

p-Electrode

270

p-Diffusion

n-Substrate GaP

n-Epitaxy GaAsP

n-Epitaxy GaAsP

n-Electrode

265

265

120