© 2004

OSA Opto Light GmbH — Tel. +49-(0)30-65 76 26 83 — Fax +49-(0)30-65 76 26 81 — contact@osa-opto.com

YELLOW

Item No.: 170622

1.

This specification applies to GaAsP / GaP LED Chips

2.

Structure

2.1

Mesa structure

2.2

Electrodes

p-side (anode)

Au alloy

n-side (cathode)

Au alloy

3.

Outlines (dimensions in microns)

Wire bond contacts can also be square

4.

Electrical and optical characteristics (T=25°C)

Parameter

Symbol

Conditions

min

typ

max

Unit

Forward voltage

1,85

2,05

V

Reverse current

10

µA

Luminous intensity *

180

300

cd

dom. wavelength

λ

D

590

nm

* On request, wafers will be delivered according to luminous intensity classes

Brightness measurement at OSA on gold plate

5.

Packing

Dice on adhesive film with 1) wire bond side on top

2) back contact on top

6.

Labeling

Type

Lot No.

Quantity

min

max

p-Electrode

250

p-Epitaxy GaP

n-Substrate GaP

n-Epitaxy GaP

n-Epitaxy GaP

n-Electrode

235

235

110