M12L128168A datasheet(4/22 Pages) ESMT

Part #	M12L128168A

Description	2M x 16 Bit x 4 Banks Synchronous DRAM

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Manufacturer	ESMT [Elite Semiconductor Memory Technology Inc.]

Direct Link	http://www.esmt.com.tw/index.asp

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ESMT

M12L128168A

Operation temperature condition -40

°C ~85°C

Elite Semiconductor Memory Technology Inc.

Publication Date: Oct. 2007

Revision: 1.2

4/43

DC CHARACTERISTICS

Recommended operating condition unless otherwise noted，TA = -40 to 85 C

°

Version

Parameter

Symbol

Test Condition

CAS

Latency

-5

-6

-7

Unit

Note

Operating Current

(One Bank Active)

ICC1

Burst Length = 1, tRC ≥ tRC(min), IOL = 0 mA

170

160

140

mA

1,2

ICC2P

CKE

≤ VIL(max), tcc = tCK(MIN)

2

Precharge Standby Current

in power-down mode

ICC2PS

CKE & CLK

≤ VIL (max), tCC = ∞

2

mA

ICC2N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = tCK(MIN)

Input signals are changed one time during 2tck

45

Precharge Standby Current

in non power-down mode

ICC2NS

CKE

≥ VIH(min), CLK ≤ VIL(max), tcc = ∞

input signals are stable

25

mA

ICC3P

CKE

≤ VIL(max), tCC = tCK(MIN)

6

Active Standby Current

in power-down mode

ICC3PS

CKE & CLK

≤ VIL(max), tCC = ∞

6

mA

ICC3N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC=15ns

Input signals are changed one time during 2clks

All other pins

≥ VDD-0.2V or ≤ 0.2V

55

mA

Active Standby Current

in non power-down mode

(One Bank Active)

ICC3NS

CKE

≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

input signals are stable

35

mA

Operating Current

(Burst Mode)

ICC4

IOL = 0 mA, Page Burst, 2 Banks activated

280

210

180

mA

1,2

Refresh Current

ICC5

tRC ≥ tRC(min)

280

210

180

mA

Self Refresh Current

ICC6

CKE

≤ 0.2V

2

mA

Note :

1. Measured with outputs open.

2. Input signals are changed one time during 2 CLKS.

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