ESMT

M12L128168A

Operation temperature condition -40

Elite Semiconductor Memory Technology Inc.

Publication Date: Oct. 2007

Revision: 1.2

3/43

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

-1.0 ~ 4.6

V

-1.0 ~ 4.6

V

Storage temperature

TSTG

-55 ~ +150

C

°

Power dissipation

PD

1

W

Short circuit current

50

mA

Note :

Permanent device damage may occur if ABSOLUTE MAXIMUM RATING are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

DC OPERATING CONDITION

° )

Parameter

Symbol

Min

Typ

Max

Unit

Note

Supply voltage

3.0

3.3

3.6

V

Input logic high voltage

2.0

3.0

V

1

Input logic low voltage

-0.3

0

0.8

V

2

Output logic high voltage

2.4

-

-

V

Output logic low voltage

-

-

0.4

V

Input leakage current

-5

-

5

μ A

3

Output leakage current

-5

-

5

μ A

4

Note:

3. Any input 0V

4. Dout is disabled , 0V

CAPACITANCE

° , f = 1MHZ)

Parameter

Symbol

Min

Max

Unit

Input capacitance (A0 ~ A11, A13 ~ A12)

2.5

4

pF

Input capacitance

(CLK, CKE, CS , RAS , CAS , WE & L(U)DQM)

2.5

4

pF

Data input/output capacitance (DQ0 ~ DQ15)

2

6.5

pF