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NX5323EH Datasheet(PDF) 1 Page - NEC |
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NX5323EH Datasheet(HTML) 1 Page - NEC |
1 / 7 page ![]() DATA SHEET The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. LASER DIODE NX5323EH 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE Document No. PL10741EJ01V0DS (1st edition) Date Published July 2009 NS Printed in Japan 2009 DESCRIPTION The NX5323EH is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is designed for application up to 1.25 Gb/s. APPLICATION • FTTH PON (B-PON, G-PON, GE-PON 10 km) system FEATURES • Optical output power Po = 13.0 mW • Low threshold current lth = 7 mA • Differential Efficiency ηd = 0.5 W/A • Wide operating temperature range TC = −40 to +85°C • InGaAs monitor PIN-PD • CAN package φ 5.6 mm • Focal point 6.35 mm |
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