STK14D88
Document Number: 001-52037 Rev. **
Page 12 of 17
To initiate the software STORE cycle, the following READ
sequence must be performed:
1. Read Address 0x0E38, Valid READ
2. Read Address 0x31C7, Valid READ
3. Read Address 0x03E0, Valid READ
4. Read Address 0x3C1F, Valid READ
5. Read Address 0x303F, Valid READ
6. Read Address 0x0FC0, Initiate STORE Cycle
Once the sixth address in the sequence has been entered, the
STORE cycle will commence and the chip will be disabled. It is
important that READ cycles and not WRITE cycles be used in
the sequence. After the tSTORE cycle time has been fulfilled, the
SRAM will again be activated for READ and WRITE operation.
Software RECALL
Data can be transferred from the nonvolatile memory to the
SRAM by a software address sequence. A software RECALL
cycle is initiated with a sequence of READ operations in a
manner similar to the software STORE initiation. To initiate the
RECALL cycle, the following sequence of E controlled READ
operations must be performed:
1. Read Address 0x0E38, Valid READ
2. Read Address 0x31C7, Valid READ
3. Read Address 0x03E0, Valid READ
4. Read Address 0x3C1F, Valid READ
5. Read Address 0x303F, Valid READ
6. Read Address 0x0C63, Initiate RECALL Cycle
Internally, RECALL is a two-step procedure. First, the SRAM
data is cleared, and second, the nonvolatile information is trans-
ferred into the SRAM cells. After the tRECALL cycle time, the
SRAM will once again be ready for READ or WRITE operations.
The RECALL operation in no way alters the data in the nonvol-
atile storage elements.
Data Protection
The STK14D88 protects data from corruption during low-voltage
conditions by inhibiting all externally initiated STORE and
WRITE operations. The low-voltage condition is detected when
VCC<VSWITCH.
If the STK14D88 is in a WRITE mode (both E and W low) at
power-up, after a RECALL, or after a STORE, the WRITE will be
inhibited until a negative transition on E or W is detected. This
protects against inadvertent writes during power up or brown out
conditions.
Best Practices
nvSRAM products have been used effectively for over 15 years.
While ease-of-use is one of the product’s main system values,
experience gained working with hundreds of applications has
resulted in the following suggestions as best practices:
■ The nonvolatile cells in an nvSRAM are programmed on the
test floor during final test and quality assurance. Incoming
inspection routines at customer or contract manufacturer’s
sites will sometimes reprogram these values. Final NV patterns
are typically repeating patterns of AA, 55, 00, FF, A5, or 5A.
End product’s firmware should not assume an NV array is in a
set programmed state. Routines that check memory content
values to determine first time system configuration, cold or
warm boot status, etc. should always program a unique NV
pattern (e.g., complex 4-byte pattern of 46 E6 49 53 hex or
more random bytes) as part of the final system manufacturing
test to ensure these system routines work consistently.
■ Power up boot firmware routines should rewrite the nvSRAM
into the desired state (autostore enabled, etc.). While the
nvSRAM is shipped in a preset state, best practice is to again
rewrite the nvSRAM into the desired state as a safeguard
against events that might flip the bit inadvertently (program
bugs, incoming inspection routines, etc.).
■ If AutoStore has been firmware disabled, it will not reset to
“autostore enabled” on every power down event captured by
the nvSRAM. The application firmware should re-enable or
re-disable autostore on each reset sequence based on the
behavior desired.
■ The VCAP value specified in this data sheet includes a minimum
and a maximum value size. Best practice is to meet this
requirement and not exceed the max VCAP value because the
nvSRAM internal algorithm calculates VCAP charge time based
on this max VCAP value. Customers that want to use a larger
VCAP value to make sure there is extra store charge and store
time should discuss their VCAP size selection with Cypress to
understand any impact on the VCAP voltage level at the end of
a tRECALL period.
Low Average Active Power
CMOS technology provides the STK14D88 with the benefit of
power supply current that scales with cycle time. Less current will
be drawn as the memory cycle time becomes longer than 50 ns.
Figure 13
shows
the
relationship
between
ICC
and
READ/WRITE cycle time. Worst-case current consumption is
shown for commercial temperature range, VCC = 3.6V, and chip
enable at maximum frequency. Only standby current is drawn
when the chip is disabled. The overall average current drawn by
the STK14D88 depends on the following items:
■ The duty cycle of chip enable
■ The overall cycle rate for operations
■ The ratio of READs to WRITEs
■ The operating temperature
■ The VCC level
■ I/O loading
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