1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

One Watt Amplifier Transistor

PNP Silicon

MAXIMUM RATINGS

Rating

Symbol

BDC02D

Unit

Collector – Emitter Voltage

VCEO

–100

Vdc

Collector – Base Voltage

VCBO

–100

Vdc

Emitter – Base Voltage

VEBO

–5.0

Vdc

Collector Current — Continuous

IC

–0.5

Adc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

1.0

8.0

Watts

mW/

°C

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

2.5

20

Watts

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

125

°C/W

Thermal Resistance, Junction to Case

RqJC

50

°C/W

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Voltage

(IC = –10 mA, IB = 0)

V(BR)CEO

–100

—

Vdc

Collector Cutoff Current

(VCB = –100 V, IE = 0)

ICBO

—

–0.1

mAdc

Emitter Cutoff Current

(IC = 0, VEB = –5.0 V)

IEBO

—

–100

nAdc

Order this document

by BDC02D/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

BDC02D

CASE 29–05, STYLE 14

TO–92 (TO–226AE)

1

2

3

COLLECTOR

2

3

BASE

1

EMITTER