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Motorola Bipolar Power Transistor Device Data

Plastic Medium Power Silicon

NPN Transistor

. . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing

complementary or quasi complementary circuits.

• DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

80

Vdc

Collector–Base Voltage

VCBO

100

Vdc

Emitter–Base Voltage

VEBO

5.0

Vdc

Collector Current

IC

2.0

Adc

Base Current

IB

1.0

Adc

Total Device Dissipation @ TC = 25_C

PD

25

Watts

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to + 150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

θJC

5.0

_C/W

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

Collector–Emitter Sustaining Voltage*

(IC = 0.1 Adc, IB = 0)

V(BR)CEO

80

—

Vdc

Collector Cutoff Current

(VCB = 100 Vdc, IE = 0)

ICBO

—

0.1

mAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO

—

1.0

mAdc

DC Current Gain

(IC = 0.15 A, VCE = 2.0 V)

(IC = 1.0 A, VCE = 2.0 V)

hFE1

hFE2

40

25

—

—

Collector–Emitter Saturation Voltage*

(IC = 1.0 Adc, IB = 0.1 Adc)

VCE(sat)

—

0.6

Vdc

Base–Emitter On Voltage*

(IC = 1.0 Adc, VCE = 2.0 Vdc)

VBE(on)

—

1.3

Vdc

Current–Gain — Bandwidth Product

(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)

fT

3.0

—

MHz

* Pulse Test: Pulse Width

x 300 µs, Duty Cycle x 2.0%.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by BD237/D

BD237

2.0 AMPERES

POWER TRANSISTORS

NPN SILICON

80 VOLTS

25 WATTS

CASE 77–08

TO–225AA TYPE

REV 7